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Truesemi TSA50N20MRoHS

Manufacturer
TruesemiAsian Brands
MPN
TSA50N20M
LCSC Part #
C3647138
Packaging
TO-3P
Customer #
Key Attributes
MOSFET N-CH 200V 50A TO-3P
Datasheetpdf iconTruesemi TSA50N20M
In-Stock: 89
89 In stock, ships now
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QtyUnit PriceTotal Amount
1+$ 0.9839$ 0.98
10+$ 0.8018$ 8.02
30+$ 0.7008$ 21.02
90+$ 0.5876$ 52.88
Standard Packaging30/Full Tube
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerTruesemi
PackagingTO-3P
Configuration-
Drain to Source Voltage200V
Output Capacitance(Coss)437pF
Current - Continuous Drain(Id)50A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation300W
Reverse Transfer Capacitance (Crss@Vds)280pF
RDS(on)46mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)4.01nF
Gate Charge(Qg)244nC@10V
TypeN-Channel
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Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging30
Sales UnitPiece

Introduction

AI Translation

This Power MOSFET is produced using Truesemi‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on - state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction based on half bridge topology.

Features

AI Translation
  • 50A, 200V, Max.RDS(on)=0.046Ω @ VGS = 10V
  • Low gate charge
  • High ruggedness
  • Fast switching
  • 100% avalanche tested
  • Improved dv/dt capability

Applications

AI Translation
  • High-efficiency switching power supply
  • Active power factor correction based on half-bridge topology