MSKSEMI AOD409-MS
| Manufacturer | MSKSEMIAsian Brands |
| MPN | AOD409-MS |
| LCSC Part # | C3647113 |
| Packaging | TO-252-2 |
| Customer # | |
| Key Attributes | MOSFET P-CH 60V 25A TO-252-2 |
| Datasheet |
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | MSKSEMI | |
| Packaging | TO-252-2 | |
| Drain to Source Voltage | 60V | |
| Output Capacitance(Coss) | 85pF | |
| Current - Continuous Drain(Id) | 25A | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 1.6V | |
| Pd - Power Dissipation | 72W | |
| Reverse Transfer Capacitance (Crss@Vds) | 60pF | |
| RDS(on) | 38mΩ@10V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 1.2nF | |
| Gate Charge(Qg) | 19nC@10V | |
| Type | P-Channel |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 2500 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
These P-channel enhancement-mode power MOSFETs are fabricated using trench DMOS technology. This advanced technology is specifically designed to minimize on-resistance, deliver superior switching performance, and withstand high-energy pulses in avalanche and commutation modes. These devices are ideal for high-efficiency, fast-switching applications.
Features
AI Translation
- -60V, -25A, R<sub>DS(ON)</sub> = 38 mΩ at V<sub>GS</sub> = -10V
- Improved dv/dt capability
- Fast switching
- Green device options available
Applications
AI Translation
- Network - Load Switch - LED Applications
In-Stock: 162
162 In stock, ships now
Add to BOM List
| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 0.4139$ 0.3933 | $ 0.39 |
| 10+ | $ 0.3321$ 0.3155 | $ 3.16 |
| 30+ | $ 0.2966$ 0.2818 | $ 8.45 |
| 100+ | $ 0.2518$ 0.2393 | $ 23.93 |
| 500+ | $ 0.2116$ 0.2011 | $ 100.55 |
| 1,000+ | $ 0.1993$ 0.1894 | $ 189.40 |
Standard Packaging2500/Full Reel | ||
Better price for more quantity?
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Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | MSKSEMI | |
| Packaging | TO-252-2 | |
| Drain to Source Voltage | 60V | |
| Output Capacitance(Coss) | 85pF | |
| Current - Continuous Drain(Id) | 25A | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 1.6V | |
| Pd - Power Dissipation | 72W | |
| Reverse Transfer Capacitance (Crss@Vds) | 60pF | |
| RDS(on) | 38mΩ@10V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 1.2nF | |
| Gate Charge(Qg) | 19nC@10V | |
| Type | P-Channel |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 2500 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
These P-channel enhancement-mode power MOSFETs are fabricated using trench DMOS technology. This advanced technology is specifically designed to minimize on-resistance, deliver superior switching performance, and withstand high-energy pulses in avalanche and commutation modes. These devices are ideal for high-efficiency, fast-switching applications.
Features
AI Translation
- -60V, -25A, R<sub>DS(ON)</sub> = 38 mΩ at V<sub>GS</sub> = -10V
- Improved dv/dt capability
- Fast switching
- Green device options available
Applications
AI Translation
- Network - Load Switch - LED Applications
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |



