MSKSEMI FDD5614P
| Manufacturer | MSKSEMIAsian Brands |
| MPN | FDD5614P |
| LCSC Part # | C3647112 |
| Packaging | TO-252-2 |
| Customer # | |
| Key Attributes | MOSFET P-CH 60V 15A TO-252-2 |
| Datasheet |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | MSKSEMI | |
| Packaging | TO-252-2 | |
| Drain to Source Voltage | 60V | |
| Output Capacitance(Coss) | 70pF | |
| Current - Continuous Drain(Id) | 15A | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 1.6V | |
| Pd - Power Dissipation | 40W | |
| Reverse Transfer Capacitance (Crss@Vds) | 42pF | |
| RDS(on) | 75mΩ@10V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 870pF | |
| Gate Charge(Qg) | 16.4nC@10V | |
| Type | P-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | MSKSEMI | |
| Packaging | TO-252-2 | |
| Drain to Source Voltage | 60V | |
| Output Capacitance(Coss) | 70pF | |
| Current - Continuous Drain(Id) | 15A | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 1.6V |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 40W | |
| Reverse Transfer Capacitance (Crss@Vds) | 42pF | |
| RDS(on) | 75mΩ@10V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 870pF | |
| Gate Charge(Qg) | 16.4nC@10V | |
| Type | P-Channel |
Report an ErrorShow similar products (0) >
Introduction
AI Translation
These P-channel enhancement-mode power MOSFETs are fabricated using Trench DMOS technology. This advanced technology is specifically designed to minimize on-resistance, deliver superior switching performance, and withstand high-energy pulses in avalanche and commutation modes. These devices are ideally suited for high-efficiency, fast-switching applications.
Features
AI Translation
- 60V, -15A, R DS(ON) = 75mΩ at VGS = -10V
- Improved dv/dt capability
- Fast switching
- 100% guaranteed EAS
- Eco-friendly devices available
Applications
AI Translation
- Motor Drive - Power Tools - LED Lighting
In-Stock: 1,560
1,560 In stock, ships now
Minimum: 5Multiple: 5Sales Unit: Piece
Add to BOM List
| Qty | Unit Price | Total Amount |
|---|---|---|
| 5+ | $ 0.3482$ 0.3308 | $ 1.65 |
| 50+ | $ 0.2851$ 0.2709 | $ 13.55 |
| 150+ | $ 0.2581$ 0.2452 | $ 36.78 |
| 500+ | $ 0.1891$ 0.1797 | $ 89.85 |
| 2,500+ | $ 0.1741$ 0.1654 | $ 413.50 |
| 5,000+ | $ 0.1651$ 0.1569 | $ 784.50 |
Standard Packaging2500/Full Reel | ||
Better price for more quantity?
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Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | MSKSEMI | |
| Packaging | TO-252-2 | |
| Drain to Source Voltage | 60V | |
| Output Capacitance(Coss) | 70pF | |
| Current - Continuous Drain(Id) | 15A | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 1.6V | |
| Pd - Power Dissipation | 40W | |
| Reverse Transfer Capacitance (Crss@Vds) | 42pF | |
| RDS(on) | 75mΩ@10V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 870pF | |
| Gate Charge(Qg) | 16.4nC@10V | |
| Type | P-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | MSKSEMI | |
| Packaging | TO-252-2 | |
| Drain to Source Voltage | 60V | |
| Output Capacitance(Coss) | 70pF | |
| Current - Continuous Drain(Id) | 15A | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 1.6V |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 40W | |
| Reverse Transfer Capacitance (Crss@Vds) | 42pF | |
| RDS(on) | 75mΩ@10V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 870pF | |
| Gate Charge(Qg) | 16.4nC@10V | |
| Type | P-Channel |
Report an ErrorShow similar products (0) >
Introduction
AI Translation
These P-channel enhancement-mode power MOSFETs are fabricated using Trench DMOS technology. This advanced technology is specifically designed to minimize on-resistance, deliver superior switching performance, and withstand high-energy pulses in avalanche and commutation modes. These devices are ideally suited for high-efficiency, fast-switching applications.
Features
AI Translation
- 60V, -15A, R DS(ON) = 75mΩ at VGS = -10V
- Improved dv/dt capability
- Fast switching
- 100% guaranteed EAS
- Eco-friendly devices available
Applications
AI Translation
- Motor Drive - Power Tools - LED Lighting
C3647112 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | ECL99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | ECL99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |



