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onsemi MJ11033GRoHS

Manufacturer
MPN
MJ11033G
LCSC Part #
C362058
Packaging
TO-204(TO-3)
Customer #
Key Attributes
120V 1000 PNP 50A TO-204(TO-3) Single Bipolar Transistors RoHS
Datasheetpdf icononsemi MJ11033G
In-Stock: 500
500 In stock, ships now
Add to BOM List
QtyUnit PriceTotal Amount
1+$ 13.0915$ 13.09
10+$ 11.2595$ 112.60
30+$ 9.2799$ 278.40
100+$ 8.3436$ 834.36
Standard Packaging100/Full Tray
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/Bipolar (BJT)/Single Bipolar Transistors
Manufactureronsemi
PackagingTO-204(TO-3)
Vbe Saturation(VBE(sat))4.5V
Current - Collector Cutoff-
Collector - Emitter Voltage VCEO120V
Emitter-Base Voltage VEBO5V
DC Current Gain1000
Pd - Power Dissipation300W
typePNP
Current - Collector(Ic)50A
Operating Temperature-55℃~+200℃@(Tj)
Vce Saturation(VCE(sat))3.5V

Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging100
Sales UnitPiece

Introduction

AI Translation

High-current complementary silicon power transistors for use as output devices in complementary general-purpose amplifier applications.

Features

AI Translation
  • High DC current gain — h_FE min. 1000 at I_C = 25 A DC
  • h_FE min. 400 at I_C = 50 A DC
  • Characterized to 100 A (pulsed)
  • Diode protection to rated I_C
  • Monolithic construction with built-in base-emitter shunt resistor
  • Junction temperature up to +200°C
  • Available in lead-free package