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ST STD1NK60T4RoHS

Manufacturer
ST
MPN
STD1NK60T4
LCSC Part #
C361030
Packaging
DPAK
Customer #
Key Attributes
MOSFET N-CH 600V 1A DPAK
Datasheetpdf iconST STD1NK60T4
In-Stock: 2,930
2,930 In stock, ships now
Minimum: 1Multiple: 1Sales Unit: Piece
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QtyUnit PriceTotal Amount
1+$ 0.647$ 0.65
10+$ 0.5544$ 5.54
30+$ 0.5137$ 15.41
100+$ 0.465$ 46.50
500+$ 0.4422$ 221.10
1,000+$ 0.4292$ 429.20
Standard Packaging2500/Full Reel
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Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerST
PackagingDPAK
Drain to Source Voltage600V
Output Capacitance(Coss)23.5pF
Current - Continuous Drain(Id)1A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3.7V
Pd - Power Dissipation30W
Reverse Transfer Capacitance (Crss@Vds)3.8pF
RDS(on)8.5Ω@10V
Number1 N-channel
Input Capacitance(Ciss)156pF
Gate Charge(Qg)7nC@10V
TypeN-Channel
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Introduction

AI Translation

This high voltage device is an N-channel Power MOSFET developed using the SuperMESH™ technology, an optimization of the well-established PowerMESH™. In addition to a significant reduction in on-resistance, this device is designed to ensure a high level of dv/dt capability for the most demanding applications.

Features

AI Translation
  • Extremely high dv/dt capability
  • ESD improved capability
  • 100% avalanche tested
  • Gate charge minimized

Applications

AI Translation
  • Low power battery chargers
  • Swith mode low power supplies (SMPS)
  • Low power, ballast, CFL (compact fluorescent lamps)