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Modelli EDAEasyEDA
Nexperia NHUMH13F
| Produttore | |
| Cod. Prod. | NHUMH13F |
| Cod. LCSC | C3588745 |
| Imballo | TSSOP-6 |
| Numero Cliente | |
| Attr. chiave | 100 350mW 100mA 80V 2 NPN (Pre-Biased) TSSOP-6 Bipolar Transistor Arrays, Pre-Biased RoHS |
| Scheda Tecnica |  Nexperia NHUMH13F |
| Parti alternative | 1 |
Specifiche del Prodotto
Tutto
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/Bipolar (BJT)/Bipolar Transistor Arrays, Pre-Biased | |
| Produttore | Nexperia | |
| Imballo | TSSOP-6 | |
| Current - Collector Cutoff | 100nA | |
| Transition frequency(fT) | 170MHz | |
| Emitter-Base Voltage VEBO | 7V | |
| DC Current Gain | 100 | |
| Vce Saturation(VCE(sat)) | 100mV@10mA,0.5mA | |
| Operating Temperature | -55℃~+150℃ | |
| Output Voltage(VO(on)) | - | |
| Input Resistor | - | |
| Resistor Ratio | 10 | |
| Pd - Power Dissipation | 350mW | |
| Voltage - Input(Max)(VI(off)) | 500mV@100uA,5V | |
| Input Voltage (VI(on)@Ic,Vce) | 1.4V@10mA,0.3V | |
| Current - Collector(Ic) | 100mA | |
| Collector - Emitter Voltage VCEO | 80V | |
| type | NPN | |
| Number | 2 NPN (Pre-Biased) |
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/Bipolar (BJT)/Bipolar Transistor Arrays, Pre-Biased | |
| Produttore | Nexperia | |
| Imballo | TSSOP-6 | |
| Current - Collector Cutoff | 100nA | |
| Transition frequency(fT) | 170MHz | |
| Emitter-Base Voltage VEBO | 7V | |
| DC Current Gain | 100 | |
| Vce Saturation(VCE(sat)) | 100mV@10mA,0.5mA | |
| Operating Temperature | -55℃~+150℃ | |
| Output Voltage(VO(on)) | - |
| Tipo | Descrizione | |
|---|---|---|
| Input Resistor | - | |
| Resistor Ratio | 10 | |
| Pd - Power Dissipation | 350mW | |
| Voltage - Input(Max)(VI(off)) | 500mV@100uA,5V | |
| Input Voltage (VI(on)@Ic,Vce) | 1.4V@10mA,0.3V | |
| Current - Collector(Ic) | 100mA | |
| Collector - Emitter Voltage VCEO | 80V | |
| type | NPN | |
| Number | 2 NPN (Pre-Biased) |
Segnala un erroreMostra prodotti simili (0) >
Descrizione
Traduzione AI
NPN/NPN resistor-equipped dual transistor (RET) series in ultra-compact SOT363 (SC-88) SMD plastic package.
Caratteristiche
Traduzione AI
- Output current capability up to 100 mA
- High breakdown voltage
- Built-in resistor
- Simplified circuit design
- Reduced component count
- Lower assembly cost
- AEC-Q101 qualified
Applicazioni
Traduzione AI
- Digital applications
- Low-cost replacement for BC846 series in digital applications
- Control IC inputs
- Switching loads
Disponibile: 100
100 Pronta consegna
Minimo: 1Multiplo: 1Unità di vendita: Piece
Aggiungi alla Lista BOM
| Qtà | Pr. unit. | Importo totale |
|---|---|---|
| 1+ | $ 0.409 | $ 0.41 |
| 10+ | $ 0.3226 | $ 3.23 |
| 30+ | $ 0.2868 | $ 8.60 |
| 100+ | $ 0.2412 | $ 24.12 |
| 500+ | $ 0.22 | $ 110.00 |
| 1,000+ | $ 0.2086 | $ 208.60 |
Package Standard10000/Full Reel | ||
Prezzo migliore per quantità maggiore?
$
Specifiche del Prodotto
Tutto
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/Bipolar (BJT)/Bipolar Transistor Arrays, Pre-Biased | |
| Produttore | Nexperia | |
| Imballo | TSSOP-6 | |
| Current - Collector Cutoff | 100nA | |
| Transition frequency(fT) | 170MHz | |
| Emitter-Base Voltage VEBO | 7V | |
| DC Current Gain | 100 | |
| Vce Saturation(VCE(sat)) | 100mV@10mA,0.5mA | |
| Operating Temperature | -55℃~+150℃ | |
| Output Voltage(VO(on)) | - | |
| Input Resistor | - | |
| Resistor Ratio | 10 | |
| Pd - Power Dissipation | 350mW | |
| Voltage - Input(Max)(VI(off)) | 500mV@100uA,5V | |
| Input Voltage (VI(on)@Ic,Vce) | 1.4V@10mA,0.3V | |
| Current - Collector(Ic) | 100mA | |
| Collector - Emitter Voltage VCEO | 80V | |
| type | NPN | |
| Number | 2 NPN (Pre-Biased) |
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/Bipolar (BJT)/Bipolar Transistor Arrays, Pre-Biased | |
| Produttore | Nexperia | |
| Imballo | TSSOP-6 | |
| Current - Collector Cutoff | 100nA | |
| Transition frequency(fT) | 170MHz | |
| Emitter-Base Voltage VEBO | 7V | |
| DC Current Gain | 100 | |
| Vce Saturation(VCE(sat)) | 100mV@10mA,0.5mA | |
| Operating Temperature | -55℃~+150℃ | |
| Output Voltage(VO(on)) | - |
| Tipo | Descrizione | |
|---|---|---|
| Input Resistor | - | |
| Resistor Ratio | 10 | |
| Pd - Power Dissipation | 350mW | |
| Voltage - Input(Max)(VI(off)) | 500mV@100uA,5V | |
| Input Voltage (VI(on)@Ic,Vce) | 1.4V@10mA,0.3V | |
| Current - Collector(Ic) | 100mA | |
| Collector - Emitter Voltage VCEO | 80V | |
| type | NPN | |
| Number | 2 NPN (Pre-Biased) |
Segnala un erroreMostra prodotti simili (0) >
Descrizione
Traduzione AI
NPN/NPN resistor-equipped dual transistor (RET) series in ultra-compact SOT363 (SC-88) SMD plastic package.
Caratteristiche
Traduzione AI
- Output current capability up to 100 mA
- High breakdown voltage
- Built-in resistor
- Simplified circuit design
- Reduced component count
- Lower assembly cost
- AEC-Q101 qualified
Applicazioni
Traduzione AI
- Digital applications
- Low-cost replacement for BC846 series in digital applications
- Control IC inputs
- Switching loads
C3588745 Libreria EasyEDA
Conformità & Codici di Esportazione
| Tipo | Dettagli |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541600000 |
| USHTS | 8541600080 |
| TARIC | 8541600000 |
| CAHTS | 8541600010 |
| BRHTS | 85416010 |
| INHTS | 85416000 |
| MXHTS | 8541.60.01 |
| Tipo | Dettagli |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541600000 |
| USHTS | 8541600080 |
| TARIC | 8541600000 |
| Tipo | Dettagli |
|---|---|
| CAHTS | 8541600010 |
| BRHTS | 85416010 |
| INHTS | 85416000 |
| MXHTS | 8541.60.01 |
Parti alternative
| MPN | Produttore | Confezione | Disponibilità | Prezzo unitario | ||
|---|---|---|---|---|---|---|
| NHUMH13X | Nexperia | TSSOP-6 | 0 | $ 1.433 |