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Infineon IHW15N120R3RoHS

Manufacturer
Infineon
MPN
IHW15N120R3
LCSC Part #
C350814
Packaging
TO-247-3
Customer #
Key Attributes
Resonant Switching Series Reverse conducting IGBT with monolithic body diode
Datasheetpdf iconInfineon IHW15N120R3
In-Stock: 2,556
2,556 In stock, ships now
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QtyUnit PriceTotal Amount
1+$ 2.1256$ 2.13
10+$ 1.8227$ 18.23
30+$ 1.6315$ 48.95
90+$ 1.4371$ 129.34
510+$ 1.3496$ 688.30
990+$ 1.3107$ 1297.59
Standard Packaging30/Full Tube
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Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Transistors/IGBTs/Single IGBTs
ManufacturerInfineon
PackagingTO-247-3
Td(off)300ns
Pd - Power Dissipation254W
Operating Temperature-40℃~+175℃
Current - Collector(Ic)30A
Collector-Emitter Breakdown Voltage (Vces)1.2kV
Reverse Transfer Capacitance (Cres)32pF
Input Capacitance(Cies)1.165nF
Gate-Emitter Threshold Voltage (Vge(th)@Ic)5.1V@0.4mA
Vce Saturation(VCE(sat))1.7V@15A,15V
Output Capacitance(Coes)40pF
Gate Charge(Qg)165nC@15V
Switching Energy(Eoff)700uJ
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Features

AI Translation
  • Powerful monolithic body diode with low forward voltage designed for soft commutation only
  • TRENCHSTOPTM technology applications offers:
    • very tight parameter distribution
    • high ruggedness, temperature stable behavior
    • low VCEsat
    • easy parallel switching capability due to positive temperature coefficient in VCEsat
  • Low EMI
  • Qualified according to JEDEC for target applications
  • Pb-free lead plating; RoHS compliant
  • Complete product spectrum and PSpice Models

Applications

AI Translation
  • Inductive cooking
  • Inverterized microwave ovens
  • Resonant converters
  • Soft switching applications