onsemi FDMS86181
| Manufacturer | |
| MPN | FDMS86181 |
| LCSC Part # | C348548 |
| Packaging | Power56-8 |
| Customer # | |
| Key Attributes | MOSFET N-CH 100V 124A Power56-8 |
| Datasheet |
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | onsemi | |
| Packaging | Power56-8 | |
| Drain to Source Voltage | 100V | |
| Current - Continuous Drain(Id) | 124A | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Pd - Power Dissipation | 125W | |
| Reverse Transfer Capacitance (Crss@Vds) | 40pF | |
| RDS(on) | 12mΩ@6V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 4.125nF | |
| Gate Charge(Qg) | 59nC@10V | |
| Type | N-Channel |
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Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 3000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
This N-Channel MV MOSFET is produced using advanced PowerTrench process that incorporates Shielded Gate technology. This process has been optimized to minimise on-state resistance and yet maintain superior switching performance with best in class soft body diode.
Features
AI Translation
- Shielded Gate MOSFET Technology
- Max rDS(on)=4.2 mΩ at VGS=10 V, lD=44 A
- Max rDS(on)=12 mΩ at VGS=6 V, lD=22 A
- 50% lower Qrr than other MOSFET suppliers
- Lowers switching noise/EMI
- MSL1 robust package design
- 100% UIL tested
- RoHS Compliant
Applications
AI Translation
- Primary DC-DC MOSFET
- Synchronous Rectifier in DC-DC and AC-DC
- Motor Drive
- Solar
In-Stock: 3,036
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| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 1.6334 | $ 1.63 |
| 10+ | $ 1.3778 | $ 13.78 |
| 30+ | $ 1.2182 | $ 36.55 |
| 100+ | $ 1.0553 | $ 105.53 |
| 500+ | $ 0.982 | $ 491.00 |
| 1,000+ | $ 0.9495 | $ 949.50 |
Standard Packaging3000/Full Reel | ||
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Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | onsemi | |
| Packaging | Power56-8 | |
| Drain to Source Voltage | 100V | |
| Current - Continuous Drain(Id) | 124A | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Pd - Power Dissipation | 125W | |
| Reverse Transfer Capacitance (Crss@Vds) | 40pF | |
| RDS(on) | 12mΩ@6V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 4.125nF | |
| Gate Charge(Qg) | 59nC@10V | |
| Type | N-Channel |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 3000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
This N-Channel MV MOSFET is produced using advanced PowerTrench process that incorporates Shielded Gate technology. This process has been optimized to minimise on-state resistance and yet maintain superior switching performance with best in class soft body diode.
Features
AI Translation
- Shielded Gate MOSFET Technology
- Max rDS(on)=4.2 mΩ at VGS=10 V, lD=44 A
- Max rDS(on)=12 mΩ at VGS=6 V, lD=22 A
- 50% lower Qrr than other MOSFET suppliers
- Lowers switching noise/EMI
- MSL1 robust package design
- 100% UIL tested
- RoHS Compliant
Applications
AI Translation
- Primary DC-DC MOSFET
- Synchronous Rectifier in DC-DC and AC-DC
- Motor Drive
- Solar
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |



