NCE NCE8295AD
| Manufacturer | NCEAsian Brands |
| MPN | NCE8295AD |
| LCSC Part # | C341704 |
| Packaging | TO-263-2L |
| Customer # | |
| Key Attributes | MOSFET N-CH 82V 95A TO-263-2L |
| Datasheet |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | NCE | |
| Packaging | TO-263-2L | |
| Drain to Source Voltage | 82V | |
| Current - Continuous Drain(Id) | 95A | |
| Operating Temperature - | -55℃~+175℃ | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Pd - Power Dissipation | 170W | |
| Reverse Transfer Capacitance (Crss@Vds) | 261pF | |
| RDS(on) | 8mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 6.8nF | |
| Gate Charge(Qg) | 109.3nC@10V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | NCE | |
| Packaging | TO-263-2L | |
| Drain to Source Voltage | 82V | |
| Current - Continuous Drain(Id) | 95A | |
| Operating Temperature - | -55℃~+175℃ | |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 170W | |
| Reverse Transfer Capacitance (Crss@Vds) | 261pF | |
| RDS(on) | 8mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 6.8nF | |
| Gate Charge(Qg) | 109.3nC@10V | |
| Type | N-Channel |
Report an ErrorShow similar products (0) >
Introduction
AI Translation
The NCE8295AD utilizes advanced trench technology and design to deliver excellent RDS(ON) with low gate charge. This device is suitable for PWM, load switching, and general-purpose applications.
Features
AI Translation
- VDS = 82 V, ID = 95 A
- RDS(ON) < 8.0 mΩ @ VGS = 10 V (Typical: 6.6 mΩ)
- High-density cell design for ultra-low RDS(ON)
- Fully characterized avalanche voltage and current ratings
- Optimized for converter and power control applications
- High EAS with excellent stability and consistency
- Thermally enhanced package
- Special process technology for high ESD capability
Applications
AI Translation
- Power switch applications
- Hard switching and high-frequency circuits
- Uninterruptible power supplies
In-Stock: 1,152
1,152 In stock, ships now
Minimum: 1Multiple: 1Sales Unit: Piece
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| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 0.827 | $ 0.83 |
| 10+ | $ 0.6353 | $ 6.35 |
| 30+ | $ 0.554 | $ 16.62 |
| 100+ | $ 0.4517 | $ 45.17 |
| 500+ | $ 0.4062 | $ 203.10 |
| 800+ | $ 0.3786 | $ 302.88 |
Standard Packaging800/Full Reel | ||
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Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | NCE | |
| Packaging | TO-263-2L | |
| Drain to Source Voltage | 82V | |
| Current - Continuous Drain(Id) | 95A | |
| Operating Temperature - | -55℃~+175℃ | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Pd - Power Dissipation | 170W | |
| Reverse Transfer Capacitance (Crss@Vds) | 261pF | |
| RDS(on) | 8mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 6.8nF | |
| Gate Charge(Qg) | 109.3nC@10V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | NCE | |
| Packaging | TO-263-2L | |
| Drain to Source Voltage | 82V | |
| Current - Continuous Drain(Id) | 95A | |
| Operating Temperature - | -55℃~+175℃ | |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 170W | |
| Reverse Transfer Capacitance (Crss@Vds) | 261pF | |
| RDS(on) | 8mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 6.8nF | |
| Gate Charge(Qg) | 109.3nC@10V | |
| Type | N-Channel |
Report an ErrorShow similar products (0) >
Introduction
AI Translation
The NCE8295AD utilizes advanced trench technology and design to deliver excellent RDS(ON) with low gate charge. This device is suitable for PWM, load switching, and general-purpose applications.
Features
AI Translation
- VDS = 82 V, ID = 95 A
- RDS(ON) < 8.0 mΩ @ VGS = 10 V (Typical: 6.6 mΩ)
- High-density cell design for ultra-low RDS(ON)
- Fully characterized avalanche voltage and current ratings
- Optimized for converter and power control applications
- High EAS with excellent stability and consistency
- Thermally enhanced package
- Special process technology for high ESD capability
Applications
AI Translation
- Power switch applications
- Hard switching and high-frequency circuits
- Uninterruptible power supplies
C341704 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
