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VISHAY SQ2337CES-T1_GE3 product image
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VISHAY SQ2337CES-T1_GE3RoHS

Manufacturer
VISHAY
MPN
SQ2337CES-T1_GE3
LCSC Part #
C33880179
Packaging
SOT-23
Customer #
Key Attributes
MOSFET P-CH 80V 2.2A SOT-23
Datasheetpdf iconVISHAY SQ2337CES-T1_GE3
In-Stock: 1,075
1,075 In stock, ships now
Minimum: 5Multiple: 5Sales Unit: Piece
Add to BOM List
QtyUnit PriceTotal Amount
5+$ 0.3189$ 1.59
50+$ 0.2515$ 12.58
150+$ 0.2225$ 33.38
500+$ 0.1864$ 93.20
2,500+$ 0.1704$ 426.00
4,000+$ 0.1607$ 642.80
Standard Packaging4000/Full Reel
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Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerVISHAY
PackagingSOT-23
Drain to Source Voltage80V
Output Capacitance(Coss)39pF
Current - Continuous Drain(Id)2.2A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))2V
Pd - Power Dissipation3W
RDS(on)241mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)23pF
Number1 P-Channel
Input Capacitance(Ciss)382pF
Gate Charge(Qg)9.3nC@40V
TypeP-Channel
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Features

AI Translation
  • Trench power MOSFET
  • AEC-Q101 qualified
  • 100% tested for gate resistance (Rg) and unclamped inductive switching (UIS)
  • RoHS compliant and halogen-free
  • P-channel MOSFET