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VISHAY IRF640PBFRoHS

Manufacturer
VISHAY
MPN
IRF640PBF
LCSC Part #
C335249
Packaging
ITO-220AB-3
Customer #
Key Attributes
MOSFET N-CH 200V 18A ITO-220AB-3
Datasheetpdf iconVISHAY IRF640PBF
In-Stock: 63
63 In stock, ships now
Add to BOM List
QtyUnit PriceTotal Amount
1+$ 1.1286$ 1.13
10+$ 0.8977$ 8.98
50+$ 0.7822$ 39.11
100+$ 0.6684$ 66.84
500+$ 0.6001$ 300.05
1,000+$ 0.5659$ 565.90
Standard Packaging50/Full Tube
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerVISHAY
PackagingITO-220AB-3
Drain to Source Voltage200V
Output Capacitance(Coss)430pF
Current - Continuous Drain(Id)18A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation125W
Reverse Transfer Capacitance (Crss@Vds)130pF
RDS(on)180mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.3nF
Gate Charge(Qg)70nC@10V
TypeN-Channel
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Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging50
Sales UnitPiece

Introduction

AI Translation

Third generation power MOSFETs provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220AB contribute to its wide acceptance throughout the industry.

Features

AI Translation
  • Dynamic dV/dt rating
  • Repetitive avalanche rated Available
  • Fast switching RoHS
  • Ease of paralleling Available
  • Simple drive requirements