LCSC Electronics logoLCSC Electronics svg logo
Sign In
USD
Cart
VISHAY IRFR110TRPBF product image
  • IRFR110TRPBF thumbnail 1
  • IRFR110TRPBF thumbnail 2
  • IRFR110TRPBF thumbnail 3
  • Pinout
  • Footprint
Images for reference only

VISHAY IRFR110TRPBFRoHS

Manufacturer
VISHAY
MPN
IRFR110TRPBF
LCSC Part #
C335247
Packaging
TO-252
Customer #
Key Attributes
MOSFET N-CH 100V 4.3A TO-252
Datasheetpdf iconVISHAY IRFR110TRPBF
In-Stock: 1,128
1,128 In stock, ships now
Add to BOM List
QtyUnit PriceTotal Amount
1+$ 0.6589$ 0.66
10+$ 0.5245$ 5.25
30+$ 0.4582$ 13.75
100+$ 0.3902$ 39.02
500+$ 0.3513$ 175.65
1,000+$ 0.3303$ 330.30
Standard Packaging2000/Full Reel
Better price for more quantity?
$

Products Specifications

Show similar products (0) >
TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerVISHAY
PackagingTO-252
Drain to Source Voltage100V
Output Capacitance(Coss)80pF
Current - Continuous Drain(Id)4.3A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation2.5W
Reverse Transfer Capacitance (Crss@Vds)15pF
RDS(on)540mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)180pF
Gate Charge(Qg)8.3nC@10V
TypeN-Channel
Report an ErrorShow similar products (0) >

Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging2000
Sales UnitPiece

Introduction

AI Translation

Third generation power MOSFETs provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Power dissipation levels up to 1.5 W are possible in typical surface mount applications.

Features

AI Translation
  • Dynamic dV/dt Rating
  • Repetitive Avalanche Rated
  • Surface Mount (IRFR110, SiHFR110)
  • Available in Tape and Reel
  • Fast Switching
  • Ease of Paralleling
  • RoHS COMPLIANT HALOGEN FREE Available