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ST SCT027H65G3AG product image
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ST SCT027H65G3AGRoHS

Manufacturer
ST
MPN
SCT027H65G3AG
LCSC Part #
C33402085
Packaging
H2PAK-7
Customer #
Key Attributes
SICFET 650V 60A H2PAK-7
Datasheetpdf iconST SCT027H65G3AG

Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerST
PackagingH2PAK-7
Drain to Source Voltage650V
Output Capacitance(Coss)135pF
Current - Continuous Drain(Id)60A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))4.2V
Pd - Power Dissipation300W
RDS(on)39.3mΩ
Reverse Transfer Capacitance (Crss@Vds)17.2pF
Number1 N-channel
Input Capacitance(Ciss)1.277nF
Gate Charge(Qg)48.6nC
TypeN-Channel
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Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging1000
Sales UnitPiece

Introduction

AI Translation

This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 3rd generation SiC MOSFET technology. The device features a very low RDS(on) over the entire temperature range combined with low capacitances and very high switching operations, which improve application performance in frequency, energy efficiency, system size and weight reduction.

Features

AI Translation
  • AEC-Q101 qualified
  • Very low RDS(on) over the entire temperature range
  • High speed switching performances
  • Very fast and robust intrinsic body diode
  • Source sensing pin for increased efficiency

Applications

AI Translation
  • Main inverter (electric traction)
  • DC/DC converter for EV/HEV
  • On board charger (OBC)
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QtyUnit Price(Reference Only)Total Amount
1+$ 26.4261$ 26.43
10+$ 25.6287$ 256.29
Standard Packaging1000/Full Bag
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