TOSHIBA 1SS190TE85LF
| Manufacturer | |
| MPN | 1SS190TE85LF |
| LCSC Part # | C3312994 |
| Packaging | SC-59-3 |
| Customer # | |
| Key Attributes | 4ns Standalone 80V 1.2V@100mA 100mA SC-59-3 Single Diodes RoHS |
| Datasheet |
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Diodes/Rectifiers/Single Diodes | |
| Manufacturer | TOSHIBA | |
| Packaging | SC-59-3 | |
| Reverse Recovery Time (trr) | 4ns | |
| Diode Configuration | Standalone | |
| Operating Junction Temperature Range | - | |
| Voltage - DC Reverse (Vr) (Max) | 80V | |
| Voltage - Forward(Vf@If) | 1.2V@100mA | |
| Reverse Leakage Current (Ir) | 500nA@80V | |
| Current - Rectified | 100mA |
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Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 3000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
The TOSHIBA 1SS190 is a silicon epitaxial planar diode designed for ultra-high-speed switching applications. It is AEC-Q101 qualified, housed in a compact SC-59 package, and features low forward voltage (typical VF(3) = 0.92 V), fast reverse recovery time (typical trr = 1.6 ns), and low total capacitance (typical CT = 2.2 pF).
Features
AI Translation
- AEC-Q101 qualified
- Small package: SC-59
- Low forward voltage: typical V<sub>F(3)</sub> = 0.92 V
- Fast reverse recovery time: typical t<sub>rr</sub> = 1.6 ns
- Small total capacitance: typical C<sub>T</sub> = 2.2 pF
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| Qty | Unit Price(Reference Only) | Total Amount |
|---|---|---|
| 1+ | $ 0.0474 | $ 0.05 |
| 200+ | $ 0.0184 | $ 3.68 |
| 500+ | $ 0.0177 | $ 8.85 |
| 1,000+ | $ 0.0174 | $ 17.40 |
Standard Packaging3000/Full Reel | ||
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Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Diodes/Rectifiers/Single Diodes | |
| Manufacturer | TOSHIBA | |
| Packaging | SC-59-3 | |
| Reverse Recovery Time (trr) | 4ns | |
| Diode Configuration | Standalone | |
| Operating Junction Temperature Range | - | |
| Voltage - DC Reverse (Vr) (Max) | 80V | |
| Voltage - Forward(Vf@If) | 1.2V@100mA | |
| Reverse Leakage Current (Ir) | 500nA@80V | |
| Current - Rectified | 100mA |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 3000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
The TOSHIBA 1SS190 is a silicon epitaxial planar diode designed for ultra-high-speed switching applications. It is AEC-Q101 qualified, housed in a compact SC-59 package, and features low forward voltage (typical VF(3) = 0.92 V), fast reverse recovery time (typical trr = 1.6 ns), and low total capacitance (typical CT = 2.2 pF).
Features
AI Translation
- AEC-Q101 qualified
- Small package: SC-59
- Low forward voltage: typical V<sub>F(3)</sub> = 0.92 V
- Fast reverse recovery time: typical t<sub>rr</sub> = 1.6 ns
- Small total capacitance: typical C<sub>T</sub> = 2.2 pF
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541100000 |
| USHTS | 8541100040 |
| TARIC | 8541100000 |
| CAHTS | 8541100090 |
| BRHTS | 85411011 |
| INHTS | 85411000 |
| MXHTS | 8541.10.01 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541100000 |
| USHTS | 8541100040 |
| TARIC | 8541100000 |
| Type | Details |
|---|---|
| CAHTS | 8541100090 |
| BRHTS | 85411011 |
| INHTS | 85411000 |
| MXHTS | 8541.10.01 |

