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Minos IRF1407RoHS

Manufacturer
MinosAsian Brands
MPN
IRF1407
LCSC Part #
C33129604
Packaging
TO-220
Customer #
Key Attributes
MOSFET N-CH 80V 200A TO-220
Datasheetpdf iconMinos IRF1407
In-Stock: 208
208 In stock, ships now
Add to BOM List
QtyUnit PriceTotal Amount
1+$ 0.7389$ 0.74
10+$ 0.5974$ 5.97
50+$ 0.5111$ 25.56
100+$ 0.4411$ 44.11
500+$ 0.4004$ 200.20
1,000+$ 0.3776$ 377.60
Standard Packaging50/Full Tube
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerMinos
PackagingTO-220
Drain to Source Voltage80V
Current - Continuous Drain(Id)200A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation270W
Reverse Transfer Capacitance (Crss@Vds)810pF
RDS(on)4mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)13.2nF
Gate Charge(Qg)257nC@10V
TypeN-Channel
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Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging50
Sales UnitPiece

Introduction

AI Translation

The IRF1407 uses advanced trench technology to provide excellent RDS(ON), low gate charge. It can be used in a wide variety of applications.

Features

AI Translation
  • VDS = 80V, ID = 200A, RDS(ON) < 4mΩ @ VGS = 10V
  • High density cell design for lower Rdson
  • Fully characterized avalanche voltage and current
  • Good stability and uniformity with high EAS
  • Excellent package for good heat dissipation

Applications

AI Translation
  • Power switching application
  • Hard switched and High frequency circuits
  • Uninterruptible power supply