Infineon BGS12P2L6E6327

The BGS12P2L6 is a general purpose RF MOS power switch, designed to cover a broad range of high power applications from 0.05 to 6 GHz, mainly in the transmit path of GSM, WCDMA and LTE mobile phones. The chip integrates on-chip CMOS logic driven by a simple, single-pin CMOS or TTL compatible control input signal. Unlike GaAs technology, external DC blocking capacitors at the RF ports are only required if DC voltage is applied externally. The BGS12P2L6 RF switch is manufactured in Infineon’s patented MOS technology, offering the performance of GaAs with the economy and integration of conventional CMOS including the inherent higher ESD robustness. The device has a very small size of only 0.7×1.1 mm² and a maximum height of 0.31 mm.

• High linearity up to 37 dBm input power
• Low insertion loss and high port to port isolation up to 6 GHz
• Low current consumption
• On-chip control logic
• Ultra low profile leadless plastic package
• RoHS and WEEE compliant package
• RF CMOS SPDT antenna switch with power handling capability of up to 37 dBm
• Suitable for multi-mode LTE and WCDMA applications
• Low insertion loss and harmonics generation
• 0.05 to 6 GHz coverage
• High port-to-port isolation
• No blocking capacitors required if no DC applied on RF lines
• Leadless and halogen free package TSLP-6-4 with lateral size of 0.7 mm x 1.1 mm and thickness of 0.31 mm
• No power supply decoupling required
• High EMI robustness

• The transmit path of GSM, WCDMA and LTE mobile phones