onsemi HUF76113DK8T
| Manufacturer | |
| MPN | HUF76113DK8T |
| LCSC Part # | C3291409 |
| Packaging | VFSOP-8-2.3mm |
| Customer # | |
| Key Attributes | 6A 2.5W 32mΩ@10V 3V 2 N-Channel VFSOP-8-2.3mm FET, MOSFET Arrays RoHS |
| Datasheet |
Products Specifications
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays | |
| Manufacturer | onsemi | |
| Packaging | VFSOP-8-2.3mm | |
| Current - Continuous Drain(Id) | 6A | |
| Pd - Power Dissipation | 2.5W | |
| RDS(on) | 32mΩ@10V | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Drain to Source Voltage | 30V | |
| Type | N-Channel | |
| Reverse Transfer Capacitance (Crss@Vds) | 40pF | |
| Number | 2 N-Channel | |
| Input Capacitance(Ciss) | 605pF | |
| Gate Charge(Qg) | 19.2nC@10V | |
| Operating Temperature | -55℃~+150℃ | |
| Output Capacitance(Coss) | 275pF |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays | |
| Manufacturer | onsemi | |
| Packaging | VFSOP-8-2.3mm | |
| Current - Continuous Drain(Id) | 6A | |
| Pd - Power Dissipation | 2.5W | |
| RDS(on) | 32mΩ@10V | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Drain to Source Voltage | 30V |
| Type | Description | |
|---|---|---|
| Type | N-Channel | |
| Reverse Transfer Capacitance (Crss@Vds) | 40pF | |
| Number | 2 N-Channel | |
| Input Capacitance(Ciss) | 605pF | |
| Gate Charge(Qg) | 19.2nC@10V | |
| Operating Temperature | -55℃~+150℃ | |
| Output Capacitance(Coss) | 275pF |
Introduction
This N-channel power MOSFET is manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per unit silicon area, delivering exceptional performance. The device can withstand high energy in avalanche mode, and its diode features an extremely short reverse recovery time and very low stored charge. It is designed for applications demanding high power efficiency, such as switching regulators, switching converters, motor drivers, relay drivers, low-voltage bus switches, and power management in portable and battery-powered products.
Features
- Logic-level gate drive
- 6A, 30V
- Ultra-low on-resistance, rDS(ON) = 0.032 Ω
- Temperature-compensated PSPICE model
- Temperature-compensated SABER model
- Thermal impedance SPICE model
- Thermal impedance SABER model
- Peak current vs. pulse width curve
- UIS rating curve
Applications
- Switching regulators
- Switching converters
- Motor drivers
- Relay drivers
- Low-voltage bus switches
- Power management for portable and battery-powered products
| Qty | Unit Price(Reference Only) | Total Amount |
|---|---|---|
| 1+ | $ 0.0544 | $ 0.05 |
| 200+ | $ 0.0211 | $ 4.22 |
| 500+ | $ 0.0203 | $ 10.15 |
| 1,000+ | $ 0.02 | $ 20.00 |
Standard Packaging2500/Full Reel | ||
Products Specifications
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays | |
| Manufacturer | onsemi | |
| Packaging | VFSOP-8-2.3mm | |
| Current - Continuous Drain(Id) | 6A | |
| Pd - Power Dissipation | 2.5W | |
| RDS(on) | 32mΩ@10V | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Drain to Source Voltage | 30V | |
| Type | N-Channel | |
| Reverse Transfer Capacitance (Crss@Vds) | 40pF | |
| Number | 2 N-Channel | |
| Input Capacitance(Ciss) | 605pF | |
| Gate Charge(Qg) | 19.2nC@10V | |
| Operating Temperature | -55℃~+150℃ | |
| Output Capacitance(Coss) | 275pF |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays | |
| Manufacturer | onsemi | |
| Packaging | VFSOP-8-2.3mm | |
| Current - Continuous Drain(Id) | 6A | |
| Pd - Power Dissipation | 2.5W | |
| RDS(on) | 32mΩ@10V | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Drain to Source Voltage | 30V |
| Type | Description | |
|---|---|---|
| Type | N-Channel | |
| Reverse Transfer Capacitance (Crss@Vds) | 40pF | |
| Number | 2 N-Channel | |
| Input Capacitance(Ciss) | 605pF | |
| Gate Charge(Qg) | 19.2nC@10V | |
| Operating Temperature | -55℃~+150℃ | |
| Output Capacitance(Coss) | 275pF |
Introduction
This N-channel power MOSFET is manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per unit silicon area, delivering exceptional performance. The device can withstand high energy in avalanche mode, and its diode features an extremely short reverse recovery time and very low stored charge. It is designed for applications demanding high power efficiency, such as switching regulators, switching converters, motor drivers, relay drivers, low-voltage bus switches, and power management in portable and battery-powered products.
Features
- Logic-level gate drive
- 6A, 30V
- Ultra-low on-resistance, rDS(ON) = 0.032 Ω
- Temperature-compensated PSPICE model
- Temperature-compensated SABER model
- Thermal impedance SPICE model
- Thermal impedance SABER model
- Peak current vs. pulse width curve
- UIS rating curve
Applications
- Switching regulators
- Switching converters
- Motor drivers
- Relay drivers
- Low-voltage bus switches
- Power management for portable and battery-powered products
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |

