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onsemi SI6955DQ product image
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onsemi SI6955DQRoHS

Manufacturer
onsemi
MPN
SI6955DQ
LCSC Part #
C3291392
Packaging
TSSOP-8
Customer #
Key Attributes
2.5A 1W 190mΩ@4.5V 1.9V 2 P-Channel TSSOP-8 FET, MOSFET Arrays RoHS
Datasheetpdf icononsemi SI6955DQ
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QtyUnit Price(Reference Only)Total Amount
1+$ 0.3754$ 0.38
200+$ 0.1453$ 29.06
500+$ 0.1402$ 70.10
1,000+$ 0.1377$ 137.70
Standard Packaging3000/Full Reel
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Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays
Manufactureronsemi
PackagingTSSOP-8
Configuration-
Current - Continuous Drain(Id)2.5A
Pd - Power Dissipation1W
RDS(on)190mΩ@4.5V
Gate Threshold Voltage (Vgs(th))1.9V
Drain to Source Voltage30V
TypeP-Channel
Reverse Transfer Capacitance (Crss@Vds)39pF
Number2 P-Channel
Input Capacitance(Ciss)298pF
Gate Charge(Qg)15nC@10V
Operating Temperature-55℃~+150℃
Output Capacitance(Coss)83pF
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Introduction

AI Translation

This P-channel MOSFET utilizes Fairchild Semiconductor's advanced PowerTrench process, featuring a robust gate structure. It is optimized for power management applications requiring a wide range of gate drive voltage ratings (4.5V - 20V).

Features

AI Translation
  • R DS(ON) = 190 mΩ at V GS = -4.5 V
  • -2.5 A, -30 V, R DS(ON) = 85 mΩ at V GS = -10 V
  • Extended V GSS range (±20 V) for battery applications
  • Low gate charge
  • High-performance trench technology for ultra-low R DS(ON)
  • Thin TSSOP-8 package

Applications

AI Translation
  • Load switch
  • Battery protection
  • DC/DC conversion
  • Power management