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onsemi FDW2509NZ product image
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onsemi FDW2509NZRoHS

Manufacturer
onsemi
MPN
FDW2509NZ
LCSC Part #
C3291384
Packaging
TSSOP-8
Customer #
Key Attributes
7.1A 30W 26mΩ@2.5V 1.5V 2 N-Channel TSSOP-8 FET, MOSFET Arrays RoHS
Datasheetpdf icononsemi FDW2509NZ
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QtyUnit Price(Reference Only)Total Amount
1+$ 0.4753$ 0.48
200+$ 0.1852$ 37.04
500+$ 0.1775$ 88.75
1,000+$ 0.1744$ 174.40
Standard Packaging2500/Full Reel
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Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays
Manufactureronsemi
PackagingTSSOP-8
ConfigurationCommon Drain
Current - Continuous Drain(Id)7.1A
Pd - Power Dissipation30W
RDS(on)26mΩ@2.5V
Gate Threshold Voltage (Vgs(th))1.5V
Drain to Source Voltage20V
TypeN-Channel
Reverse Transfer Capacitance (Crss@Vds)179pF
Number2 N-Channel
Input Capacitance(Ciss)1.263nF
Gate Charge(Qg)19nC@4.5V
Operating Temperature-55℃~+150℃
Output Capacitance(Coss)327pF
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Introduction

AI Translation

This 2.5V-rated N-channel MOSFET is a robust gate version fabricated using the advanced PowerTrench process, optimized for power management applications with wide-range gate drive voltages (2.5V - 12V).

Features

AI Translation
  • RDS(ON) = 26 mΩ at VGS = 2.5V
  • 7.1A, 20V, RDS(ON) = 20 mΩ at VGS = 4.5V
  • Extended VGSS range (±12V) for battery applications
  • ESD protection diode
  • High-performance trench technology for ultra-low RDS(ON)
  • Thin TSSOP-8 package

Applications

AI Translation
  • Lithium-ion battery pack