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onsemi RF3S49092SM9A product image
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onsemi RF3S49092SM9ARoHS

Manufacturer
onsemi
MPN
RF3S49092SM9A
LCSC Part #
C3291145
Packaging
TO-263-5
Customer #
Key Attributes
20A 50W 140mΩ@5V 1V 1 N-Channel + 1 P-Channel TO-263-5 FET, MOSFET Arrays RoHS
Datasheetpdf icononsemi RF3S49092SM9A
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QtyUnit Price(Reference Only)Total Amount
1+$ 2.8607$ 2.86
200+$ 1.1079$ 221.58
500+$ 1.0678$ 533.90
1,000+$ 1.0493$ 1049.30
Standard Packaging800/Full Reel
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Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays
Manufactureronsemi
PackagingTO-263-5
Current - Continuous Drain(Id)20A
Pd - Power Dissipation50W
RDS(on)140mΩ@5V
Gate Threshold Voltage (Vgs(th))1V
Drain to Source Voltage12V
TypeN-Channel + P-Channel
Number1 N-Channel + 1 P-Channel
Input Capacitance(Ciss)750pF;775pF
Gate Charge(Qg)15nC@5V
Operating Temperature-55℃~+175℃
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Introduction

AI Translation

These complementary power MOSFETs are manufactured using the advanced MegaFET process. This process employs feature sizes approaching those of LSI, enabling full utilization of silicon material to achieve outstanding performance. It is designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and low-voltage bus switches. The device achieves full-rated conduction within a gate bias voltage range of 3V to 5V, enabling direct true switching power control via logic-level (5V) ICs.

Features

AI Translation
  • 20A, 12V (N-Channel)
  • 10A, 12V (P-Channel)
  • r<sub>DS(ON)</sub> = 0.060Ω (N-Channel)
  • r<sub>DS(ON)</sub> = 0.140Ω (P-Channel)
  • Temperature-compensated PSPICE model
  • R<sub>DS(ON)</sub> vs. gate drive voltage curves
  • Peak current vs. pulse width curves
  • Single-pulse avalanche energy (UIS) rated curves

Applications

AI Translation
  • Switching Regulator
  • Switching Converter
  • Motor Driver
  • Relay Driver
  • Low-Voltage Bus Switch