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MICROCHIP MSC025SMA120B4
| Manufacturer | |
| MPN | MSC025SMA120B4 |
| LCSC Part # | C3290749 |
| Packaging | TO-247-4 |
| Customer # | |
| Key Attributes | SICFET N-CH 1.2kV 103A TO-247-4 |
| Datasheet |  MICROCHIP MSC025SMA120B4 |
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | MICROCHIP | |
| Packaging | TO-247-4 | |
| Drain to Source Voltage | 1.2kV | |
| Output Capacitance(Coss) | 270pF | |
| Current - Continuous Drain(Id) | 103A | |
| Operating Temperature - | -55℃~+175℃ | |
| Gate Threshold Voltage (Vgs(th)) | 2.8V | |
| Pd - Power Dissipation | 500W | |
| Reverse Transfer Capacitance (Crss@Vds) | 25pF | |
| RDS(on) | 31mΩ | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 3.02nF | |
| Gate Charge(Qg) | 232nC | |
| Type | N-Channel |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 1 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
The silicon carbide (SiC) power MOSFET product line increases the performance over silicon MOSFET and silicon IGBT solutions while lowering the total cost of ownership for high-voltage applications. The MSC025SMA120B device is a 1200 V, 25 mΩ SiC MOSFET in a TO-247 package.
Features
AI Translation
- Low capacitances and low gate charge
- Fast switching speed due to low internal gate resistance (ESR)
- Stable operation at high junction temperature, TJ(max)=175 °C
- Fast and reliable body diode
- Superior avalanche ruggedness
- RoHS compliant
Applications
AI Translation
- PV inverter, converter, and industrial motor drives
- Smart grid transmission and distribution
- Induction heating and welding
- H/EV powertrain and EV charger
- Power supply and distribution
In-Stock: 9
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| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 12.8357 | $ 12.84 |
Standard Packaging1/Full Tube | ||
Better price for more quantity?
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Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | MICROCHIP | |
| Packaging | TO-247-4 | |
| Drain to Source Voltage | 1.2kV | |
| Output Capacitance(Coss) | 270pF | |
| Current - Continuous Drain(Id) | 103A | |
| Operating Temperature - | -55℃~+175℃ | |
| Gate Threshold Voltage (Vgs(th)) | 2.8V | |
| Pd - Power Dissipation | 500W | |
| Reverse Transfer Capacitance (Crss@Vds) | 25pF | |
| RDS(on) | 31mΩ | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 3.02nF | |
| Gate Charge(Qg) | 232nC | |
| Type | N-Channel |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 1 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
The silicon carbide (SiC) power MOSFET product line increases the performance over silicon MOSFET and silicon IGBT solutions while lowering the total cost of ownership for high-voltage applications. The MSC025SMA120B device is a 1200 V, 25 mΩ SiC MOSFET in a TO-247 package.
Features
AI Translation
- Low capacitances and low gate charge
- Fast switching speed due to low internal gate resistance (ESR)
- Stable operation at high junction temperature, TJ(max)=175 °C
- Fast and reliable body diode
- Superior avalanche ruggedness
- RoHS compliant
Applications
AI Translation
- PV inverter, converter, and industrial motor drives
- Smart grid transmission and distribution
- Induction heating and welding
- H/EV powertrain and EV charger
- Power supply and distribution
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | |
| USHTS | |
| TARIC | |
| CAHTS | |
| BRHTS | |
| INHTS | |
| MXHTS |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | |
| USHTS | |
| TARIC |
| Type | Details |
|---|---|
| CAHTS | |
| BRHTS | |
| INHTS | |
| MXHTS | |