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MICROCHIP MSC015SMA070B product image
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MICROCHIP MSC015SMA070BRoHS

Manufacturer
MICROCHIP
MPN
MSC015SMA070B
LCSC Part #
C3290705
Packaging
TO-247
Customer #
Key Attributes
Silicon Carbide N-Channel Power MOSFET
Datasheetpdf iconMICROCHIP MSC015SMA070B
In-Stock: 5
5 In stock, ships now
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QtyUnit PriceTotal Amount
1+$ 28.158$ 28.16
30+$ 26.6753$ 800.26
Standard Packaging30/Full Tube
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerMICROCHIP
PackagingTO-247
Drain to Source Voltage700V
Output Capacitance(Coss)510pF
Current - Continuous Drain(Id)140A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))2.4V
Pd - Power Dissipation455W
Reverse Transfer Capacitance (Crss@Vds)29pF
RDS(on)19mΩ
Number1 N-channel
Input Capacitance(Ciss)4.5nF
Gate Charge(Qg)215nC
TypeN-Channel
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Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging30
Sales UnitPiece

Introduction

AI Translation

The silicon carbide (SiC) power MOSFET product line increases the performance over silicon MOSFET and silicon IGBT solutions while lowering the total cost of ownership for high-voltage applications. The MSC015SMA070B device is a 700 V, 15 mΩ SiC MOSFET in a TO-247 package.

Features

AI Translation
  • Low capacitances and low gate charge
  • Fast switching speed due to low internal gate resistance (ESR)
  • Stable operation at high junction temperature, TJ(max)=175 ℃
  • Fast and reliable body diode
  • Superior avalanche ruggedness
  • RoHS compliant

Applications

AI Translation
  • PV inverter, converter, and industrial motor drives
  • Smart grid transmission and distribution
  • Induction heating and welding
  • H/EV powertrain and EV charger
  • Power supply and distribution