Nexperia 2N7002HR
| Manufacturer | |
| MPN | 2N7002HR |
| LCSC Part # | C3290631 |
| Packaging | TO-236AB |
| Customer # | |
| Key Attributes | MOSFET N-CH 60V 360mA TO-236AB |
| Datasheet |
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Nexperia | |
| Packaging | TO-236AB | |
| Drain to Source Voltage | 60V | |
| Current - Continuous Drain(Id) | 360mA | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 2.4V | |
| Pd - Power Dissipation | 1.1W | |
| Reverse Transfer Capacitance (Crss@Vds) | - | |
| RDS(on) | 1.6Ω@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 34pF | |
| Gate Charge(Qg) | 500pC@4.5V | |
| Type | N-Channel |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 5 |
| Multiple | 5 |
| Standard Packaging | 3000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Features
AI Translation
- Logic-level compatible
- Very fast switching
- Trench MOSFET technology
- AEC-Q101 qualified
Applications
AI Translation
- Relay driver
- High-speed line driver
- Low-side load switch
- Switching circuits
In-Stock: 1,055
1,055 In stock, ships now
Add to BOM List
| Qty | Unit Price | Total Amount |
|---|---|---|
| 5+ | $ 0.2332 | $ 1.17 |
| 50+ | $ 0.1821 | $ 9.11 |
| 150+ | $ 0.1603 | $ 24.05 |
| 500+ | $ 0.133 | $ 66.50 |
| 3,000+ | $ 0.1147 | $ 344.10 |
| 6,000+ | $ 0.1074 | $ 644.40 |
Standard Packaging3000/Full Reel | ||
Better price for more quantity?
$
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Nexperia | |
| Packaging | TO-236AB | |
| Drain to Source Voltage | 60V | |
| Current - Continuous Drain(Id) | 360mA | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 2.4V | |
| Pd - Power Dissipation | 1.1W | |
| Reverse Transfer Capacitance (Crss@Vds) | - | |
| RDS(on) | 1.6Ω@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 34pF | |
| Gate Charge(Qg) | 500pC@4.5V | |
| Type | N-Channel |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 5 |
| Multiple | 5 |
| Standard Packaging | 3000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Features
AI Translation
- Logic-level compatible
- Very fast switching
- Trench MOSFET technology
- AEC-Q101 qualified
Applications
AI Translation
- Relay driver
- High-speed line driver
- Low-side load switch
- Switching circuits
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |



