LCSC Electronics logoLCSC Electronics svg logo
Sign In
USD
Cart
ST STP9N65M2 product image
  • STP9N65M2 thumbnail 1
  • STP9N65M2 thumbnail 2
  • STP9N65M2 thumbnail 3
  • Pinout
  • Footprint
Images for reference only

ST STP9N65M2RoHS

Manufacturer
ST
MPN
STP9N65M2
LCSC Part #
C3290219
Packaging
TO-220
Customer #
Key Attributes
MOSFET N-CH 650V 5A TO-220
Datasheetpdf iconST STP9N65M2
In-Stock: 100
100 In stock, ships now
Add to BOM List
QtyUnit PriceTotal Amount
1+$ 1.8896$ 1.89
10+$ 1.587$ 15.87
30+$ 1.3971$ 41.91
100+$ 1.204$ 120.40
500+$ 1.1155$ 557.75
1,000+$ 1.0784$ 1078.40
Standard Packaging50/Full Tube
Better price for more quantity?
$

Products Specifications

Show similar products (0) >
TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerST
PackagingTO-220
Drain to Source Voltage650V
Output Capacitance(Coss)18pF
Current - Continuous Drain(Id)5A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation60W
Reverse Transfer Capacitance (Crss@Vds)0.9pF
RDS(on)900mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)310pF
Gate Charge(Qg)10.3nC@10V
TypeN-Channel
Report an ErrorShow similar products (0) >

Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging50
Sales UnitPiece

Introduction

AI Translation

These devices are N-channel Power MOSFETs developed using the MDmesh M2 technology. Thanks to their strip layout and improved vertical structure, these devices exhibit low on-resistance and optimized switching characteristics, rendering them suitable for the most demanding high-efficiency converters.

Features

AI Translation
  • Extremely low gate charge
  • Excellent output capacitance (COSS) profile
  • 100% avalanche tested
  • Zener-protected

Applications

AI Translation
  • Switching applications