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DIODES DMN3190LDW-13
| Manufacturer | |
| MPN | DMN3190LDW-13 |
| LCSC Part # | C3290124 |
| Packaging | SOT-363 |
| Customer # | |
| Key Attributes | MOSFET N-CH ARR 30V 1A SOT-363 |
| Datasheet |  DIODES DMN3190LDW-13 |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays | |
| Manufacturer | DIODES | |
| Packaging | SOT-363 | |
| Current - Continuous Drain(Id) | 1A | |
| Pd - Power Dissipation | 400mW | |
| RDS(on) | 335mΩ@4.5V | |
| Gate Threshold Voltage (Vgs(th)) | 2.8V | |
| Drain to Source Voltage | 30V | |
| Type | N-Channel | |
| Reverse Transfer Capacitance (Crss@Vds) | 12pF | |
| Number | 2 N-Channel | |
| Input Capacitance(Ciss) | 87pF | |
| Gate Charge(Qg) | 2nC@10V | |
| Operating Temperature | -55℃~+150℃ |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays | |
| Manufacturer | DIODES | |
| Packaging | SOT-363 | |
| Current - Continuous Drain(Id) | 1A | |
| Pd - Power Dissipation | 400mW | |
| RDS(on) | 335mΩ@4.5V | |
| Gate Threshold Voltage (Vgs(th)) | 2.8V |
| Type | Description | |
|---|---|---|
| Drain to Source Voltage | 30V | |
| Type | N-Channel | |
| Reverse Transfer Capacitance (Crss@Vds) | 12pF | |
| Number | 2 N-Channel | |
| Input Capacitance(Ciss) | 87pF | |
| Gate Charge(Qg) | 2nC@10V | |
| Operating Temperature | -55℃~+150℃ |
Report an ErrorShow similar products (0) >
Introduction
AI Translation
This MOSFET is designed to minimize on-resistance R<sub>DS(ON)</sub> while maintaining superior switching performance, making it ideal for high-efficiency power management applications.
Applications
AI Translation
- Motor Control
- Power Management Functions
- Load Switch
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Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays | |
| Manufacturer | DIODES | |
| Packaging | SOT-363 | |
| Current - Continuous Drain(Id) | 1A | |
| Pd - Power Dissipation | 400mW | |
| RDS(on) | 335mΩ@4.5V | |
| Gate Threshold Voltage (Vgs(th)) | 2.8V | |
| Drain to Source Voltage | 30V | |
| Type | N-Channel | |
| Reverse Transfer Capacitance (Crss@Vds) | 12pF | |
| Number | 2 N-Channel | |
| Input Capacitance(Ciss) | 87pF | |
| Gate Charge(Qg) | 2nC@10V | |
| Operating Temperature | -55℃~+150℃ |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays | |
| Manufacturer | DIODES | |
| Packaging | SOT-363 | |
| Current - Continuous Drain(Id) | 1A | |
| Pd - Power Dissipation | 400mW | |
| RDS(on) | 335mΩ@4.5V | |
| Gate Threshold Voltage (Vgs(th)) | 2.8V |
| Type | Description | |
|---|---|---|
| Drain to Source Voltage | 30V | |
| Type | N-Channel | |
| Reverse Transfer Capacitance (Crss@Vds) | 12pF | |
| Number | 2 N-Channel | |
| Input Capacitance(Ciss) | 87pF | |
| Gate Charge(Qg) | 2nC@10V | |
| Operating Temperature | -55℃~+150℃ |
Report an ErrorShow similar products (0) >
Introduction
AI Translation
This MOSFET is designed to minimize on-resistance R<sub>DS(ON)</sub> while maintaining superior switching performance, making it ideal for high-efficiency power management applications.
Applications
AI Translation
- Motor Control
- Power Management Functions
- Load Switch
C3290124 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |