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onsemi FDC6308P
| Manufacturer | |
| MPN | FDC6308P |
| LCSC Part # | C3290089 |
| Packaging | SuperSOT-6 |
| Customer # | |
| Key Attributes | Dual P-Channel 2.5V Specified PowerTrench MOSFET, Current:1.7A, Voltage:20V |
| Datasheet |  onsemi FDC6308P |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays | |
| Manufacturer | onsemi | |
| Packaging | SuperSOT-6 | |
| Current - Continuous Drain(Id) | 5A | |
| Pd - Power Dissipation | 960mW | |
| RDS(on) | 300mΩ@2.5V | |
| Gate Threshold Voltage (Vgs(th)) | 1.5V | |
| Drain to Source Voltage | 20V | |
| Type | P-Channel | |
| Reverse Transfer Capacitance (Crss@Vds) | 45pF | |
| Number | 2 P-Channel | |
| Input Capacitance(Ciss) | 265pF | |
| Gate Charge(Qg) | 3nC@4.5V | |
| Operating Temperature | -55℃~+150℃ | |
| Output Capacitance(Coss) | 80pF |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays | |
| Manufacturer | onsemi | |
| Packaging | SuperSOT-6 | |
| Current - Continuous Drain(Id) | 5A | |
| Pd - Power Dissipation | 960mW | |
| RDS(on) | 300mΩ@2.5V | |
| Gate Threshold Voltage (Vgs(th)) | 1.5V | |
| Drain to Source Voltage | 20V |
| Type | Description | |
|---|---|---|
| Type | P-Channel | |
| Reverse Transfer Capacitance (Crss@Vds) | 45pF | |
| Number | 2 P-Channel | |
| Input Capacitance(Ciss) | 265pF | |
| Gate Charge(Qg) | 3nC@4.5V | |
| Operating Temperature | -55℃~+150℃ | |
| Output Capacitance(Coss) | 80pF |
Report an ErrorShow similar products (0) >
Introduction
AI Translation
This 2.5V specified P-channel MOSFET utilizes advanced PowerTrench technology with a robust gate structure. It is optimized for power management applications with a wide range of gate drive voltages (2.5V - 12V). These devices are designed to achieve excellent power dissipation in an extremely small footprint, suitable for applications where larger and more expensive SO-8 and TSSOP-8 packages are impractical.
Features
AI Translation
- 1.7 A, -18 V. RDS(ON) = 0.18 Ω at VGS = -4.5 V
- RDS(ON) = 0.30 Ω at VGS = -2.5 V
- Extended VGSS range (±12V) for battery applications
- Low gate charge (typical 3nC)
- Fast switching speed
- High-performance trench technology for ultra-low RDS(ON)
- SuperSOT-6 package: small footprint (72% smaller than standard SO-8); low profile (1mm)
Applications
AI Translation
- Load Switch - Battery Protection - Power Management
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| Qty | Unit Price(Reference Only) | Total Amount |
|---|---|---|
| 1+ | $ 0.5864 | $ 0.59 |
| 200+ | $ 0.2269 | $ 45.38 |
| 500+ | $ 0.2192 | $ 109.60 |
| 1,000+ | $ 0.2161 | $ 216.10 |
Standard Packaging3000/Full Reel | ||
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Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays | |
| Manufacturer | onsemi | |
| Packaging | SuperSOT-6 | |
| Current - Continuous Drain(Id) | 5A | |
| Pd - Power Dissipation | 960mW | |
| RDS(on) | 300mΩ@2.5V | |
| Gate Threshold Voltage (Vgs(th)) | 1.5V | |
| Drain to Source Voltage | 20V | |
| Type | P-Channel | |
| Reverse Transfer Capacitance (Crss@Vds) | 45pF | |
| Number | 2 P-Channel | |
| Input Capacitance(Ciss) | 265pF | |
| Gate Charge(Qg) | 3nC@4.5V | |
| Operating Temperature | -55℃~+150℃ | |
| Output Capacitance(Coss) | 80pF |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays | |
| Manufacturer | onsemi | |
| Packaging | SuperSOT-6 | |
| Current - Continuous Drain(Id) | 5A | |
| Pd - Power Dissipation | 960mW | |
| RDS(on) | 300mΩ@2.5V | |
| Gate Threshold Voltage (Vgs(th)) | 1.5V | |
| Drain to Source Voltage | 20V |
| Type | Description | |
|---|---|---|
| Type | P-Channel | |
| Reverse Transfer Capacitance (Crss@Vds) | 45pF | |
| Number | 2 P-Channel | |
| Input Capacitance(Ciss) | 265pF | |
| Gate Charge(Qg) | 3nC@4.5V | |
| Operating Temperature | -55℃~+150℃ | |
| Output Capacitance(Coss) | 80pF |
Report an ErrorShow similar products (0) >
Introduction
AI Translation
This 2.5V specified P-channel MOSFET utilizes advanced PowerTrench technology with a robust gate structure. It is optimized for power management applications with a wide range of gate drive voltages (2.5V - 12V). These devices are designed to achieve excellent power dissipation in an extremely small footprint, suitable for applications where larger and more expensive SO-8 and TSSOP-8 packages are impractical.
Features
AI Translation
- 1.7 A, -18 V. RDS(ON) = 0.18 Ω at VGS = -4.5 V
- RDS(ON) = 0.30 Ω at VGS = -2.5 V
- Extended VGSS range (±12V) for battery applications
- Low gate charge (typical 3nC)
- Fast switching speed
- High-performance trench technology for ultra-low RDS(ON)
- SuperSOT-6 package: small footprint (72% smaller than standard SO-8); low profile (1mm)
Applications
AI Translation
- Load Switch - Battery Protection - Power Management
C3290089 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |