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onsemi FDC86244RoHS

Manufacturer
onsemi
MPN
FDC86244
LCSC Part #
C3290085
Packaging
SSOT-6
Customer #
Key Attributes
MOSFET N-CH 150V 2.3A SSOT-6
Datasheetpdf icononsemi FDC86244
In-Stock: 3,995
3,995 In stock, ships now
Minimum: 5Multiple: 5Sales Unit: Piece
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QtyUnit PriceTotal Amount
5+$ 0.3346$ 1.67
50+$ 0.2713$ 13.57
150+$ 0.2442$ 36.63
500+$ 0.2104$ 105.20
3,000+$ 0.1954$ 586.20
6,000+$ 0.1864$ 1118.40
Standard Packaging3000/Full Reel
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Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
Manufactureronsemi
PackagingSSOT-6
Drain to Source Voltage150V
Output Capacitance(Coss)45pF
Current - Continuous Drain(Id)2.3A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation1.6W
RDS(on)144mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)345pF
Gate Charge(Qg)9nC@10V
TypeN-Channel
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Introduction

AI Translation

This N−Channel MOSFET is produced using advanced POWERTRENCH process that incorporates Shielded Gate technology. This process has been optimized for rDS(on), switching performance and ruggedness.

Features

AI Translation
  • TSOT23 6−Lead CASE 419BL
  • Shielded Gate MOSFET Technology
  • Max rDS(on)=144 mΩ at VGS=10 Vz, ID=2.3 A
  • Max rDS(on)=188 mΩ at VGS=6 V, ID=1.9 A
  • High Performance Trench Technology for Extremely Low rDS(on)
  • High Power and Current Handling Capability in a Widely Used Surface Mount Package
  • Fast Switching Speed
  • 100% UIL Tested
  • This Device is Pb−Free, Halogen Free/BFR Free and is RoHS Compliant

Applications

AI Translation
  • Load Switch
  • Synchronous Rectifier
  • Primary Switch