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onsemi FDC86244
| Manufacturer | |
| MPN | FDC86244 |
| LCSC Part # | C3290085 |
| Packaging | SSOT-6 |
| Customer # | |
| Key Attributes | MOSFET N-CH 150V 2.3A SSOT-6 |
| Datasheet | onsemi FDC86244 |
| RoHS Compliance | 4 documents available |
| Alternative Parts | 2 |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | onsemi | |
| Packaging | SSOT-6 | |
| Output Capacitance(Coss) | 45pF | |
| Pd - Power Dissipation | 1.6W | |
| Configuration | - | |
| Drain to Source Voltage | 150V | |
| Operating Temperature | -55℃~+150℃ | |
| Current - Continuous Drain(Id) | 2.3A | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Reverse Transfer Capacitance (Crss@Vds) | 1.7pF | |
| RDS(on) | 144mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 345pF | |
| Gate Charge(Qg) | 9nC@10V | |
| Vgs | ±20V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | onsemi | |
| Packaging | SSOT-6 | |
| Output Capacitance(Coss) | 45pF | |
| Pd - Power Dissipation | 1.6W | |
| Configuration | - | |
| Drain to Source Voltage | 150V | |
| Operating Temperature | -55℃~+150℃ | |
| Current - Continuous Drain(Id) | 2.3A |
| Type | Description | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Reverse Transfer Capacitance (Crss@Vds) | 1.7pF | |
| RDS(on) | 144mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 345pF | |
| Gate Charge(Qg) | 9nC@10V | |
| Vgs | ±20V | |
| Type | N-Channel |
Help & FeedbackShow similar products (0) >
Introduction
AI Translation
This N−Channel MOSFET is produced using advanced POWERTRENCH process that incorporates Shielded Gate technology. This process has been optimized for rDS(on), switching performance and ruggedness.
Features
AI Translation
- TSOT23 6−Lead CASE 419BL
- Shielded Gate MOSFET Technology
- Max rDS(on)=144 mΩ at VGS=10 Vz, ID=2.3 A
- Max rDS(on)=188 mΩ at VGS=6 V, ID=1.9 A
- High Performance Trench Technology for Extremely Low rDS(on)
- High Power and Current Handling Capability in a Widely Used Surface Mount Package
- Fast Switching Speed
- 100% UIL Tested
- This Device is Pb−Free, Halogen Free/BFR Free and is RoHS Compliant
Applications
AI Translation
- Load Switch
- Synchronous Rectifier
- Primary Switch
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement
In-Stock: 3,400
3,400 In stock, ships now
Minimum: 5Multiple: 5Sales Unit: Piece
Add to BOM List
| Qty | Unit Price | Total Amount |
|---|---|---|
| 5+ | $ 0.2922 | $ 1.46 |
| 50+ | $ 0.2282 | $ 11.41 |
| 150+ | $ 0.2008 | $ 30.12 |
| 500+ | $ 0.1666 | $ 83.30 |
| 3,000+ | $ 0.1513 | $ 453.90 |
| 6,000+ | $ 0.1422 | $ 853.20 |
Standard Packaging3000/Full Reel | ||
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Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | onsemi | |
| Packaging | SSOT-6 | |
| Output Capacitance(Coss) | 45pF | |
| Pd - Power Dissipation | 1.6W | |
| Configuration | - | |
| Drain to Source Voltage | 150V | |
| Operating Temperature | -55℃~+150℃ | |
| Current - Continuous Drain(Id) | 2.3A | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Reverse Transfer Capacitance (Crss@Vds) | 1.7pF | |
| RDS(on) | 144mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 345pF | |
| Gate Charge(Qg) | 9nC@10V | |
| Vgs | ±20V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | onsemi | |
| Packaging | SSOT-6 | |
| Output Capacitance(Coss) | 45pF | |
| Pd - Power Dissipation | 1.6W | |
| Configuration | - | |
| Drain to Source Voltage | 150V | |
| Operating Temperature | -55℃~+150℃ | |
| Current - Continuous Drain(Id) | 2.3A |
| Type | Description | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Reverse Transfer Capacitance (Crss@Vds) | 1.7pF | |
| RDS(on) | 144mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 345pF | |
| Gate Charge(Qg) | 9nC@10V | |
| Vgs | ±20V | |
| Type | N-Channel |
Help & FeedbackShow similar products (0) >
Introduction
AI Translation
This N−Channel MOSFET is produced using advanced POWERTRENCH process that incorporates Shielded Gate technology. This process has been optimized for rDS(on), switching performance and ruggedness.
Features
AI Translation
- TSOT23 6−Lead CASE 419BL
- Shielded Gate MOSFET Technology
- Max rDS(on)=144 mΩ at VGS=10 Vz, ID=2.3 A
- Max rDS(on)=188 mΩ at VGS=6 V, ID=1.9 A
- High Performance Trench Technology for Extremely Low rDS(on)
- High Power and Current Handling Capability in a Widely Used Surface Mount Package
- Fast Switching Speed
- 100% UIL Tested
- This Device is Pb−Free, Halogen Free/BFR Free and is RoHS Compliant
Applications
AI Translation
- Load Switch
- Synchronous Rectifier
- Primary Switch
C3290085 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Alternative Parts
| MPN | Manufacturer | Packaging | Availability | Unit Price | ||
|---|---|---|---|---|---|---|
| TPM1502NS6 | TECH PUBLIC | SOT-23-6 | 1,570 | $ 0.1844 | ||
| HSW2N15 | HUASHUO | SOT-23-6L | 10 | $ 0.2045 |