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Taiwan Semiconductor TSM4946DCS RLG
| Manufacturer | Taiwan SemiconductorAsian Brands |
| MPN | TSM4946DCS RLG |
| LCSC Part # | C3289863 |
| Packaging | SOP-8 |
| Customer # | |
| Key Attributes | 4.5A 2.4W 55mΩ@10V 3V 2 N-Channel SOP-8 FET, MOSFET Arrays RoHS |
| Datasheet |  Taiwan Semiconductor TSM4946DCS RLG |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays | |
| Manufacturer | Taiwan Semiconductor | |
| Packaging | SOP-8 | |
| Current - Continuous Drain(Id) | 4.5A | |
| Pd - Power Dissipation | 2.4W | |
| RDS(on) | 55mΩ@10V | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Drain to Source Voltage | 60V | |
| Type | N-Channel | |
| Number | 2 N-Channel | |
| Input Capacitance(Ciss) | 910pF | |
| Gate Charge(Qg) | 30nC@10V | |
| Operating Temperature | -55℃~+150℃ |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays | |
| Manufacturer | Taiwan Semiconductor | |
| Packaging | SOP-8 | |
| Current - Continuous Drain(Id) | 4.5A | |
| Pd - Power Dissipation | 2.4W | |
| RDS(on) | 55mΩ@10V | |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Type | Description | |
|---|---|---|
| Drain to Source Voltage | 60V | |
| Type | N-Channel | |
| Number | 2 N-Channel | |
| Input Capacitance(Ciss) | 910pF | |
| Gate Charge(Qg) | 30nC@10V | |
| Operating Temperature | -55℃~+150℃ |
Report an ErrorShow similar products (0) >
Features
AI Translation
- Advanced trench process technology
- High-density cell design for ultra-low on-resistance
Applications
AI Translation
- High-end DC-DC conversion
- Laptops
- Servers
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| Qty | Unit Price(Reference Only) | Total Amount |
|---|---|---|
| 1+ | $ 0.3195 | $ 0.32 |
| 200+ | $ 0.1237 | $ 24.74 |
| 500+ | $ 0.1193 | $ 59.65 |
| 1,000+ | $ 0.1172 | $ 117.20 |
Standard Packaging2500/Full Reel | ||
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Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays | |
| Manufacturer | Taiwan Semiconductor | |
| Packaging | SOP-8 | |
| Current - Continuous Drain(Id) | 4.5A | |
| Pd - Power Dissipation | 2.4W | |
| RDS(on) | 55mΩ@10V | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Drain to Source Voltage | 60V | |
| Type | N-Channel | |
| Number | 2 N-Channel | |
| Input Capacitance(Ciss) | 910pF | |
| Gate Charge(Qg) | 30nC@10V | |
| Operating Temperature | -55℃~+150℃ |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays | |
| Manufacturer | Taiwan Semiconductor | |
| Packaging | SOP-8 | |
| Current - Continuous Drain(Id) | 4.5A | |
| Pd - Power Dissipation | 2.4W | |
| RDS(on) | 55mΩ@10V | |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Type | Description | |
|---|---|---|
| Drain to Source Voltage | 60V | |
| Type | N-Channel | |
| Number | 2 N-Channel | |
| Input Capacitance(Ciss) | 910pF | |
| Gate Charge(Qg) | 30nC@10V | |
| Operating Temperature | -55℃~+150℃ |
Report an ErrorShow similar products (0) >
Features
AI Translation
- Advanced trench process technology
- High-density cell design for ultra-low on-resistance
Applications
AI Translation
- High-end DC-DC conversion
- Laptops
- Servers
C3289863 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |