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onsemi HP4936DY product image
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onsemi HP4936DY

Manufacturer
onsemi
MPN
HP4936DY
LCSC Part #
C3289823
Packaging
SOIC-8
Customer #
Key Attributes
5.8A 2W 55mΩ@4.5V 1V 2 N-Channel SOIC-8 FET, MOSFET Arrays
Datasheetpdf icononsemi HP4936DY
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Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays
Manufactureronsemi
PackagingSOIC-8
Current - Continuous Drain(Id)5.8A
Pd - Power Dissipation2W
RDS(on)55mΩ@4.5V
Gate Threshold Voltage (Vgs(th))1V
Drain to Source Voltage30V
TypeN-Channel
Reverse Transfer Capacitance (Crss@Vds)50pF
Number2 N-Channel
Input Capacitance(Ciss)625pF
Gate Charge(Qg)25nC@10V
Operating Temperature-55℃~+150℃
Output Capacitance(Coss)270pF
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Introduction

AI Translation

This power MOSFET is manufactured using an innovative process technology. This advanced process achieves the lowest possible on-resistance per unit silicon area, delivering outstanding performance. The device can withstand high energy in avalanche mode, and its diode features extremely short reverse recovery time and minimal stored charge. It is designed for applications demanding high power efficiency, such as switching regulators, switching converters, motor drivers, relay drivers, low-voltage bus switches, and power management in portable and battery-powered products.

Features

AI Translation
  • Logic-level gate drive
  • rDS(ON) = 0.037 Ω at ID = 5.8 A, VGS = 10 V
  • rDS(ON) = 0.055 Ω at ID = 4.7 A, VGS = 4.5 V

Applications

AI Translation
  • Load Switch - Power Amplifier Switch