onsemi FDS8936A
| Manufacturer | |
| MPN | FDS8936A |
| LCSC Part # | C3289795 |
| Packaging | SOIC-8 |
| Customer # | |
| Key Attributes | Dual N-Channel, Current: 6A, Voltage: 30V |
| Datasheet |  onsemi FDS8936A |
Products Specifications
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays | |
| Manufacturer | onsemi | |
| Packaging | SOIC-8 | |
| Current - Continuous Drain(Id) | 6A | |
| Pd - Power Dissipation | 2W | |
| RDS(on) | 40mΩ@4.5V | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Drain to Source Voltage | 30V | |
| Type | N-Channel | |
| Reverse Transfer Capacitance (Crss@Vds) | 95pF | |
| Number | 2 N-Channel | |
| Input Capacitance(Ciss) | 650pF | |
| Gate Charge(Qg) | 27nC@10V | |
| Operating Temperature | -55℃~+150℃ |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays | |
| Manufacturer | onsemi | |
| Packaging | SOIC-8 | |
| Current - Continuous Drain(Id) | 6A | |
| Pd - Power Dissipation | 2W | |
| RDS(on) | 40mΩ@4.5V | |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Type | Description | |
|---|---|---|
| Drain to Source Voltage | 30V | |
| Type | N-Channel | |
| Reverse Transfer Capacitance (Crss@Vds) | 95pF | |
| Number | 2 N-Channel | |
| Input Capacitance(Ciss) | 650pF | |
| Gate Charge(Qg) | 27nC@10V | |
| Operating Temperature | -55℃~+150℃ |
Introduction
N-channel enhancement-mode power MOSFETs in SO-8 packages, fabricated using a proprietary high cell density DMOS process. This ultra-high density process is specifically designed to minimize on-resistance and deliver superior switching performance. These devices are particularly suited for low-voltage applications such as notebook computer power management and other battery-powered circuits requiring fast switching, low on-state power dissipation, and transient immunity.
Features
- R DS(ON) = 0.040 Ω at V GS = 4.5 V
- 6 A, 30 V. R DS(ON) = 0.028 Ω at V GS = 10 V
- High-density cell design for ultra-low R DS(ON)
- High power and current handling capability in widely used surface mount packages
- Dual MOSFET in surface mount package
| Qty | Unit Price(Reference Only) | Total Amount |
|---|---|---|
| 1+ | $ 1.381 | $ 1.38 |
| 200+ | $ 0.5355 | $ 107.10 |
| 500+ | $ 0.5154 | $ 257.70 |
| 1,000+ | $ 0.5061 | $ 506.10 |
Standard Packaging2500/Full Reel | ||
Products Specifications
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays | |
| Manufacturer | onsemi | |
| Packaging | SOIC-8 | |
| Current - Continuous Drain(Id) | 6A | |
| Pd - Power Dissipation | 2W | |
| RDS(on) | 40mΩ@4.5V | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Drain to Source Voltage | 30V | |
| Type | N-Channel | |
| Reverse Transfer Capacitance (Crss@Vds) | 95pF | |
| Number | 2 N-Channel | |
| Input Capacitance(Ciss) | 650pF | |
| Gate Charge(Qg) | 27nC@10V | |
| Operating Temperature | -55℃~+150℃ |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays | |
| Manufacturer | onsemi | |
| Packaging | SOIC-8 | |
| Current - Continuous Drain(Id) | 6A | |
| Pd - Power Dissipation | 2W | |
| RDS(on) | 40mΩ@4.5V | |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Type | Description | |
|---|---|---|
| Drain to Source Voltage | 30V | |
| Type | N-Channel | |
| Reverse Transfer Capacitance (Crss@Vds) | 95pF | |
| Number | 2 N-Channel | |
| Input Capacitance(Ciss) | 650pF | |
| Gate Charge(Qg) | 27nC@10V | |
| Operating Temperature | -55℃~+150℃ |
Introduction
N-channel enhancement-mode power MOSFETs in SO-8 packages, fabricated using a proprietary high cell density DMOS process. This ultra-high density process is specifically designed to minimize on-resistance and deliver superior switching performance. These devices are particularly suited for low-voltage applications such as notebook computer power management and other battery-powered circuits requiring fast switching, low on-state power dissipation, and transient immunity.
Features
- R DS(ON) = 0.040 Ω at V GS = 4.5 V
- 6 A, 30 V. R DS(ON) = 0.028 Ω at V GS = 10 V
- High-density cell design for ultra-low R DS(ON)
- High power and current handling capability in widely used surface mount packages
- Dual MOSFET in surface mount package
C3289795 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |