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onsemi FDS6990S product image
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onsemi FDS6990SRoHS

Manufacturer
onsemi
MPN
FDS6990S
LCSC Part #
C3289754
Packaging
SOIC-8
Customer #
Key Attributes
Dual 30V N-Channel MOSFET, Current:7.5A, Voltage:30V
Datasheetpdf icononsemi FDS6990S
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QtyUnit Price(Reference Only)Total Amount
1+$ 1.0385$ 1.04
200+$ 0.4028$ 80.56
500+$ 0.3889$ 194.45
1,000+$ 0.3812$ 381.20
Standard Packaging2500/Full Reel
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Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays
Manufactureronsemi
PackagingSOIC-8
Current - Continuous Drain(Id)7.5A
Pd - Power Dissipation-
RDS(on)22mΩ@10V
Gate Threshold Voltage (Vgs(th))3V
Drain to Source Voltage30V
TypeN-Channel
Reverse Transfer Capacitance (Crss@Vds)106pF
Number2 N-Channel
Input Capacitance(Ciss)1.233nF
Gate Charge(Qg)16nC@10V
Operating Temperature-
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Introduction

AI Translation

The FDS6990S is designed to replace dual SO-8 MOSFETs and two Schottky diodes in synchronous DC-DC power supplies. This 30V MOSFET is optimized to maximize power conversion efficiency with low RDS(ON) and low gate charge. Each MOSFET integrates a Schottky diode using Fairchild Semiconductor's monolithic SyncFET technology. Operating as the low-side switch in a synchronous rectifier, the FDS6990S delivers performance comparable to the FDS6990A with a parallel Schottky diode.

Features

AI Translation
  • R DS(ON) = 30 mΩ at V GS = 4.5 V
  • 7.5 A, 30 V; R DS(ON) = 22 mΩ at V GS = 10 V
  • Integrated SyncFET Schottky diode
  • Low gate charge (typical 11 nC)
  • High-performance trench technology for ultra-low R DS(ON)
  • High power and current handling capability

Applications

AI Translation
  • DC/DC converters
  • Motor drivers