Infineon IRF8736PBF
| Manufacturer | |
| MPN | IRF8736PBF |
| LCSC Part # | C3289651 |
| Packaging | SO-8 |
| Customer # | |
| Key Attributes | MOSFET N-CH 30V 18A SO-8 |
| Datasheet |
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Infineon | |
| Packaging | SO-8 | |
| Drain to Source Voltage | 30V | |
| Output Capacitance(Coss) | 449pF | |
| Current - Continuous Drain(Id) | 18A | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 2.35V | |
| Pd - Power Dissipation | 2.5W | |
| Reverse Transfer Capacitance (Crss@Vds) | 219pF | |
| RDS(on) | 4.8mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 2.315nF | |
| Gate Charge(Qg) | 17nC |
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Additional Information
| Type | Details |
|---|---|
| Minimum | 5 |
| Multiple | 5 |
| Standard Packaging | 4000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
This MOSFET is designed to minimize on-resistance (R_DS(on)) while maintaining superior switching performance, making it ideal for high-efficiency power management applications.
Features
AI Translation
- Very LowRps(on) at 4.5V VGS
- LowGateCharge
- FullyCharacterizedAvalancheVoltage and Current
- 100% Tested for RG
- Lead -Free
Applications
AI Translation
- Synchronous MOSFET for Notebook Processor Power
- Synchronous Rectifier MOSFET for Isolated DC-DC Converters in Networking Systems
In-Stock: 785
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Add to BOM List
| Qty | Unit Price | Total Amount |
|---|---|---|
| 5+ | $ 0.3226 | $ 1.61 |
| 50+ | $ 0.2514 | $ 12.57 |
| 150+ | $ 0.2208 | $ 33.12 |
| 500+ | $ 0.1827 | $ 91.35 |
| 2,500+ | $ 0.1658 | $ 414.50 |
| 4,000+ | $ 0.1556 | $ 622.40 |
Standard Packaging4000/Full Reel | ||
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Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Infineon | |
| Packaging | SO-8 | |
| Drain to Source Voltage | 30V | |
| Output Capacitance(Coss) | 449pF | |
| Current - Continuous Drain(Id) | 18A | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 2.35V | |
| Pd - Power Dissipation | 2.5W | |
| Reverse Transfer Capacitance (Crss@Vds) | 219pF | |
| RDS(on) | 4.8mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 2.315nF | |
| Gate Charge(Qg) | 17nC |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 5 |
| Multiple | 5 |
| Standard Packaging | 4000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
This MOSFET is designed to minimize on-resistance (R_DS(on)) while maintaining superior switching performance, making it ideal for high-efficiency power management applications.
Features
AI Translation
- Very LowRps(on) at 4.5V VGS
- LowGateCharge
- FullyCharacterizedAvalancheVoltage and Current
- 100% Tested for RG
- Lead -Free
Applications
AI Translation
- Synchronous MOSFET for Notebook Processor Power
- Synchronous Rectifier MOSFET for Isolated DC-DC Converters in Networking Systems
C3289651 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |



