VISHAY SIDR680ADP-T1-RE3
| Manufacturer | |
| MPN | SIDR680ADP-T1-RE3 |
| LCSC Part # | C3289535 |
| Packaging | PowerPAK-SO-8DC |
| Customer # | |
| Key Attributes | 80V 137A 3.5V 125W 3.5mΩ@7.5V 1 N-channel N-Channel PowerPAK-SO-8DC Single FETs, MOSFETs RoHS |
| Datasheet |
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | VISHAY | |
| Packaging | PowerPAK-SO-8DC | |
| Drain to Source Voltage | 80V | |
| Output Capacitance(Coss) | 614pF | |
| Current - Continuous Drain(Id) | 137A | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 3.5V | |
| Pd - Power Dissipation | 125W | |
| Reverse Transfer Capacitance (Crss@Vds) | 26pF | |
| RDS(on) | 3.5mΩ@7.5V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 4.415nF | |
| Gate Charge(Qg) | 83nC@10V | |
| Type | N-Channel |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 3000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Features
AI Translation
- Fourth-generation TrenchFET power MOSFET
- Ultra-low RDS(on)-gate charge FOM
- Optimized for lowest RDS(on)-output charge FOM
- 100% tested for surge current and unclamped inductive switching
Applications
AI Translation
- Synchronous Rectification
- Primary-Side Switching
- DC/DC Converter
- OR-ing Diode Function
- Power Supply
- Motor Drive Control
- Battery and Load Switch
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| Qty | Unit Price(Reference Only) | Total Amount |
|---|---|---|
| 1+ | $ 42.5065 | $ 42.51 |
| 10+ | $ 42.4576 | $ 424.58 |
| 30+ | $ 42.425 | $ 1272.75 |
| 100+ | $ 42.3924 | $ 4239.24 |
Standard Packaging3000/Full Reel | ||
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Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | VISHAY | |
| Packaging | PowerPAK-SO-8DC | |
| Drain to Source Voltage | 80V | |
| Output Capacitance(Coss) | 614pF | |
| Current - Continuous Drain(Id) | 137A | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 3.5V | |
| Pd - Power Dissipation | 125W | |
| Reverse Transfer Capacitance (Crss@Vds) | 26pF | |
| RDS(on) | 3.5mΩ@7.5V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 4.415nF | |
| Gate Charge(Qg) | 83nC@10V | |
| Type | N-Channel |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 3000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Features
AI Translation
- Fourth-generation TrenchFET power MOSFET
- Ultra-low RDS(on)-gate charge FOM
- Optimized for lowest RDS(on)-output charge FOM
- 100% tested for surge current and unclamped inductive switching
Applications
AI Translation
- Synchronous Rectification
- Primary-Side Switching
- DC/DC Converter
- OR-ing Diode Function
- Power Supply
- Motor Drive Control
- Battery and Load Switch
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |

