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VISHAY SIR510DP-T1-RE3 product image
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VISHAY SIR510DP-T1-RE3RoHS

Manufacturer
VISHAY
MPN
SIR510DP-T1-RE3
LCSC Part #
C3289516
Packaging
PowerPAKSO-8
Customer #
Key Attributes
MOSFET N-CH 100V 126A PowerPAKSO-8
Datasheetpdf iconVISHAY SIR510DP-T1-RE3
In-Stock: 636
636 In stock, ships now
Minimum: 1Multiple: 1Sales Unit: Piece
Add to BOM List
QtyUnit PriceTotal Amount
1+$ 2.5881$ 2.59
10+$ 2.2453$ 22.45
30+$ 2.0308$ 60.92
100+$ 1.8115$ 181.15
500+$ 1.7124$ 856.20
1,000+$ 1.6685$ 1668.50
Standard Packaging3000/Full Reel
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Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerVISHAY
PackagingPowerPAKSO-8
Drain to Source Voltage100V
Current - Continuous Drain(Id)126A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation101W
Reverse Transfer Capacitance (Crss@Vds)54pF
RDS(on)4.2mΩ@7.5V
Number1 N-channel
Input Capacitance(Ciss)4.98nF
Gate Charge(Qg)60nC@10V
TypeN-Channel
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Features

AI Translation
  • TrenchFET Gen V power MOSFET
  • Very low RDS×Qg figure-of-merit (FOM)
  • Tuned for the lowest RDS×Qoss FOM
  • 100 % Rg and UIS tested
  • RoHS COMPLIANT HALOGEN FREE

Applications

AI Translation
  • Synchronous rectification
  • Primary side switch
  • DC/DC converters
  • OR-ing and hot swap switch
  • Power supplies
  • Motor drive control
  • Battery management