VISHAY SIZF928DT-T1-GE3
| Manufacturer | |
| MPN | SIZF928DT-T1-GE3 |
| LCSC Part # | C3289405 |
| Packaging | PowerPAIR-8(6x5) |
| Customer # | |
| Key Attributes | Dual N-Channel, Current: 248A, Voltage: 30V |
| Datasheet |
Products Specifications
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays | |
| Manufacturer | VISHAY | |
| Packaging | PowerPAIR-8(6x5) | |
| Current - Continuous Drain(Id) | 248A | |
| Pd - Power Dissipation | 74W | |
| RDS(on) | 2.45mΩ@10V | |
| Gate Threshold Voltage (Vgs(th)) | 2V | |
| Drain to Source Voltage | 30V | |
| Type | N-Channel | |
| Reverse Transfer Capacitance (Crss@Vds) | 125pF | |
| Number | 2 N-Channel | |
| Input Capacitance(Ciss) | 5.65nF | |
| Gate Charge(Qg) | 116nC@10V | |
| Operating Temperature | -55℃~+150℃ | |
| Output Capacitance(Coss) | 1.796nF |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays | |
| Manufacturer | VISHAY | |
| Packaging | PowerPAIR-8(6x5) | |
| Current - Continuous Drain(Id) | 248A | |
| Pd - Power Dissipation | 74W | |
| RDS(on) | 2.45mΩ@10V | |
| Gate Threshold Voltage (Vgs(th)) | 2V | |
| Drain to Source Voltage | 30V |
| Type | Description | |
|---|---|---|
| Type | N-Channel | |
| Reverse Transfer Capacitance (Crss@Vds) | 125pF | |
| Number | 2 N-Channel | |
| Input Capacitance(Ciss) | 5.65nF | |
| Gate Charge(Qg) | 116nC@10V | |
| Operating Temperature | -55℃~+150℃ | |
| Output Capacitance(Coss) | 1.796nF |
Introduction
The latest 650 V CoolMOS CFD7 extends the CFD7 series voltage range and is the successor to the 650 V CoolMOS CFD2. With improved switching performance and excellent thermal characteristics, the 650 V CoolMOS CFD7 achieves maximum efficiency in resonant switching topologies such as LLC and phase-shifted full bridge (ZVS). As part of Infineon's fast body diode portfolio, this new product family combines all the advantages of fast switching technology with outstanding hard commutation robustness. CoolMOS CFD7 technology meets the highest standards of efficiency and reliability while supporting high power density solutions.
Features
- TrenchFET 5th generation power MOSFET
- 100% Rg and UIS tested
- RoHS compliant
- Halogen-free
Applications
- CPU core power supply
- Computer/server peripherals
- Point-of-load power supply
- Synchronous buck converter
- Telecom DC/DC power supply
| Qty | Unit Price(Reference Only) | Total Amount |
|---|---|---|
| 1+ | $ 0.9721 | $ 0.97 |
| 200+ | $ 0.3765 | $ 75.30 |
| 500+ | $ 0.3642 | $ 182.10 |
| 1,000+ | $ 0.3565 | $ 356.50 |
Standard Packaging3000/Full Reel | ||
Products Specifications
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays | |
| Manufacturer | VISHAY | |
| Packaging | PowerPAIR-8(6x5) | |
| Current - Continuous Drain(Id) | 248A | |
| Pd - Power Dissipation | 74W | |
| RDS(on) | 2.45mΩ@10V | |
| Gate Threshold Voltage (Vgs(th)) | 2V | |
| Drain to Source Voltage | 30V | |
| Type | N-Channel | |
| Reverse Transfer Capacitance (Crss@Vds) | 125pF | |
| Number | 2 N-Channel | |
| Input Capacitance(Ciss) | 5.65nF | |
| Gate Charge(Qg) | 116nC@10V | |
| Operating Temperature | -55℃~+150℃ | |
| Output Capacitance(Coss) | 1.796nF |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays | |
| Manufacturer | VISHAY | |
| Packaging | PowerPAIR-8(6x5) | |
| Current - Continuous Drain(Id) | 248A | |
| Pd - Power Dissipation | 74W | |
| RDS(on) | 2.45mΩ@10V | |
| Gate Threshold Voltage (Vgs(th)) | 2V | |
| Drain to Source Voltage | 30V |
| Type | Description | |
|---|---|---|
| Type | N-Channel | |
| Reverse Transfer Capacitance (Crss@Vds) | 125pF | |
| Number | 2 N-Channel | |
| Input Capacitance(Ciss) | 5.65nF | |
| Gate Charge(Qg) | 116nC@10V | |
| Operating Temperature | -55℃~+150℃ | |
| Output Capacitance(Coss) | 1.796nF |
Introduction
The latest 650 V CoolMOS CFD7 extends the CFD7 series voltage range and is the successor to the 650 V CoolMOS CFD2. With improved switching performance and excellent thermal characteristics, the 650 V CoolMOS CFD7 achieves maximum efficiency in resonant switching topologies such as LLC and phase-shifted full bridge (ZVS). As part of Infineon's fast body diode portfolio, this new product family combines all the advantages of fast switching technology with outstanding hard commutation robustness. CoolMOS CFD7 technology meets the highest standards of efficiency and reliability while supporting high power density solutions.
Features
- TrenchFET 5th generation power MOSFET
- 100% Rg and UIS tested
- RoHS compliant
- Halogen-free
Applications
- CPU core power supply
- Computer/server peripherals
- Point-of-load power supply
- Synchronous buck converter
- Telecom DC/DC power supply
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |

