DIODES DMT3020LDV-7
| Manufacturer | |
| MPN | DMT3020LDV-7 |
| LCSC Part # | C3289384 |
| Packaging | PowerDI3333-8 |
| Customer # | |
| Key Attributes | MOSFET N-CH ARR 30V 32A PowerDI3333-8 |
| Datasheet |
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays | |
| Manufacturer | DIODES | |
| Packaging | PowerDI3333-8 | |
| Current - Continuous Drain(Id) | 32A | |
| Pd - Power Dissipation | 1.9W | |
| RDS(on) | 32mΩ@4.5V | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Drain to Source Voltage | 30V | |
| Type | N-Channel | |
| Reverse Transfer Capacitance (Crss@Vds) | 27pF | |
| Number | 2 N-Channel | |
| Input Capacitance(Ciss) | 393pF | |
| Gate Charge(Qg) | 7nC | |
| Operating Temperature | -55℃~+150℃ |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 2000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance, making it ideal for high efficiency power management applications.
Features
AI Translation
- Low On-Resistance
- Low Input Capacitance
- Fast Switching Speed
- Low Input/Output Leakage
- Totally Lead-Free & Fully RoHS Compliant
- Halogen and Antimony Free. “Green” Device
Applications
AI Translation
- Power Management Functions
- Analog Switch
In-Stock: 8
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| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 0.2282 | $ 0.23 |
| 10+ | $ 0.2234 | $ 2.23 |
| 30+ | $ 0.2202 | $ 6.61 |
| 100+ | $ 0.217 | $ 21.70 |
Standard Packaging2000/Full Reel | ||
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays | |
| Manufacturer | DIODES | |
| Packaging | PowerDI3333-8 | |
| Current - Continuous Drain(Id) | 32A | |
| Pd - Power Dissipation | 1.9W | |
| RDS(on) | 32mΩ@4.5V | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Drain to Source Voltage | 30V | |
| Type | N-Channel | |
| Reverse Transfer Capacitance (Crss@Vds) | 27pF | |
| Number | 2 N-Channel | |
| Input Capacitance(Ciss) | 393pF | |
| Gate Charge(Qg) | 7nC | |
| Operating Temperature | -55℃~+150℃ |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 2000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance, making it ideal for high efficiency power management applications.
Features
AI Translation
- Low On-Resistance
- Low Input Capacitance
- Fast Switching Speed
- Low Input/Output Leakage
- Totally Lead-Free & Fully RoHS Compliant
- Halogen and Antimony Free. “Green” Device
Applications
AI Translation
- Power Management Functions
- Analog Switch
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |



