Nexperia PXP400-100QSJ
| Manufacturer | |
| MPN | PXP400-100QSJ |
| LCSC Part # | C3288681 |
| Packaging | MLPAK(3.3x3.3) |
| Customer # | |
| Key Attributes | 100V, P-channel, 1.4A |
| Datasheet |
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Nexperia | |
| Packaging | MLPAK(3.3x3.3) | |
| Drain to Source Voltage | 100V | |
| Output Capacitance(Coss) | 25pF | |
| Current - Continuous Drain(Id) | 1.4A | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Pd - Power Dissipation | 1.7W | |
| Reverse Transfer Capacitance (Crss@Vds) | 15pF | |
| RDS(on) | 400mΩ@10V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 544pF | |
| Gate Charge(Qg) | 15.2nC@10V | |
| Type | P-Channel |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 3000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
P-channel enhancement-mode FET in a MLPAK33 (SOT8002-2) SMD plastic package using trench MOSFET technology.
Features
AI Translation
- Trench MOSFET technology
- MLPAK33 package (3.3 x 3.3 mm footprint)
- Low thermal resistance
- Low profile 0.8 mm
Applications
AI Translation
- Active clamp circuit
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| Qty | Unit Price(Reference Only) | Total Amount |
|---|---|---|
| 1+ | $ 2.2301 | $ 2.23 |
| 10+ | $ 1.9778 | $ 19.78 |
| 30+ | $ 1.8397 | $ 55.19 |
| 100+ | $ 1.6825 | $ 168.25 |
| 500+ | $ 1.5714 | $ 785.70 |
| 1,000+ | $ 1.5397 | $ 1539.70 |
Standard Packaging3000/Full Reel | ||
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Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Nexperia | |
| Packaging | MLPAK(3.3x3.3) | |
| Drain to Source Voltage | 100V | |
| Output Capacitance(Coss) | 25pF | |
| Current - Continuous Drain(Id) | 1.4A | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Pd - Power Dissipation | 1.7W | |
| Reverse Transfer Capacitance (Crss@Vds) | 15pF | |
| RDS(on) | 400mΩ@10V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 544pF | |
| Gate Charge(Qg) | 15.2nC@10V | |
| Type | P-Channel |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 3000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
P-channel enhancement-mode FET in a MLPAK33 (SOT8002-2) SMD plastic package using trench MOSFET technology.
Features
AI Translation
- Trench MOSFET technology
- MLPAK33 package (3.3 x 3.3 mm footprint)
- Low thermal resistance
- Low profile 0.8 mm
Applications
AI Translation
- Active clamp circuit
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |



