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ST RF3L05150CB4 product image
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ST RF3L05150CB4RoHS

Manufacturer
ST
MPN
RF3L05150CB4
LCSC Part #
C3288599
Packaging
LBB
Customer #
Key Attributes
150W, 28/32V, HF to 1GHz RF power LDMOS transistor
Datasheetpdf iconST RF3L05150CB4

Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/RF FETs, MOSFETs
ManufacturerST
PackagingLBB
Drain to Source Voltage90V
Current - Continuous Drain(Id)2.5A
RDS(on)1Ω@10V
Gate Threshold Voltage (Vgs(th))2.5V
Operating Temperature-
Pd - Power Dissipation150W
Reverse Transfer Capacitance (Crss@Vds)1.1pF
Input Capacitance(Ciss)70pF
Output Capacitance(Coss)30pF
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Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging100
Sales UnitPiece

Introduction

AI Translation

RF3L05150CB4 is a 150 W, 28/32 V LDMOS FET designed for broadband communication and ISM applications in the frequency range from HF to 1 GHz. It can be used in Class AB, Class B, or Class C amplifiers, supporting all typical modulation formats.

Features

AI Translation
  • High efficiency and linear gain operation
  • Integrated ESD protection
  • Wide positive and negative gate-source voltage range for improved Class C amplifier performance
  • Compliant with European Directive 2002/95/EC

Applications

AI Translation
  • 2 - 30 MHz HF/shortwave communications
  • 30 - 88 MHz land mobile communications
  • 118 - 140 MHz avionics
  • 136 - 174 MHz commercial land mobile communications
  • 30 - 512 MHz jammers, land/airborne communications
  • HF to 1000 MHz ISM - instrumentation
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QtyUnit Price(Reference Only)Total Amount
1+$ 210.3827$ 210.38
200+$ 81.4165$ 16283.30
500+$ 78.5543$ 39277.15
1,000+$ 77.1409$ 77140.90
Standard Packaging100/Full Reel
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