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ST STD7N65M2RoHS

Manufacturer
ST
MPN
STD7N65M2
LCSC Part #
C3288373
Packaging
DPAK
Customer #
Key Attributes
MOSFET N-CH 650V 5A DPAK
Datasheetpdf iconST STD7N65M2
In-Stock: 39
39 In stock, ships now
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QtyUnit PriceTotal Amount
1+$ 2.9224$ 2.92
10+$ 2.4519$ 24.52
30+$ 2.1565$ 64.70
100+$ 1.8547$ 185.47
500+$ 1.7184$ 859.20
1,000+$ 1.6584$ 1658.40
Standard Packaging2500/Full Reel
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerST
PackagingDPAK
Drain to Source Voltage650V
Output Capacitance(Coss)14.5pF
Current - Continuous Drain(Id)5A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation60W
Reverse Transfer Capacitance (Crss@Vds)0.8pF
RDS(on)1.15Ω@10V
Number1 N-channel
Input Capacitance(Ciss)270pF
Gate Charge(Qg)9nC@10V
TypeN-Channel
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Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging2500
Sales UnitPiece

Introduction

AI Translation

This device is an N-channel Power MOSFET developed using the MDmesh™ M2 technology. Thanks to the strip layout associated to an improved vertical structure, the device exhibits both low on-resistance and optimized switching characteristics. It is therefore suitable for the most demanding high efficiency converters.

Features

AI Translation
  • Extremely low gate charge
  • Excellent output capacitance (Coss) profile
  • 100% avalanche tested Zener-protected

Applications

AI Translation
  • Switching applications