LCSC Electronics logoLCSC Electronics svg logo
Sign In
USD
Cart
TI HP4936DY product image
Images for reference only

TI HP4936DYRoHS

Manufacturer
TI
MPN
HP4936DY
LCSC Part #
C3282867
Packaging
-
Customer #
Key Attributes
5.8A 55mΩ@4.5V 2W 1V FET, MOSFET Arrays RoHS
Datasheetpdf iconTI HP4936DY
Not available now
Minimum: 1Multiple: 1Sales Unit: Piece

Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays
ManufacturerTI
Packaging-
Current - Continuous Drain(Id)5.8A
RDS(on)55mΩ@4.5V
Pd - Power Dissipation2W
Gate Threshold Voltage (Vgs(th))1V
Drain to Source Voltage30V
TypeN-Channel
Reverse Transfer Capacitance (Crss@Vds)50pF
Input Capacitance(Ciss)625pF
Gate Charge(Qg)25nC@10V
Operating Temperature-55℃~+150℃
Output Capacitance(Coss)270pF
Report an ErrorShow similar products (0) >

Introduction

AI Translation

This power MOSFET is manufactured using an innovative process technology. This advanced process achieves the lowest possible on-resistance per unit silicon area, delivering outstanding performance. The device can withstand high energy in avalanche mode, and its diode features extremely short reverse recovery time and minimal stored charge. It is designed for applications demanding high power efficiency, such as switching regulators, switching converters, motor drivers, relay drivers, low-voltage bus switches, and power management in portable and battery-powered products.

Features

AI Translation
  • Logic-level gate drive
  • rDS(ON) = 0.037 Ω at ID = 5.8 A, VGS = 10 V
  • rDS(ON) = 0.055 Ω at ID = 4.7 A, VGS = 4.5 V

Applications

AI Translation
  • Load Switch - Power Amplifier Switch