onsemi ECH8664R-TL-H
| Manufacturer | |
| MPN | ECH8664R-TL-H |
| LCSC Part # | C3282593 |
| Packaging | - |
| Customer # | |
| Key Attributes | N-Channel, Current:7A, Voltage:30V |
| Datasheet |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays | |
| Manufacturer | onsemi | |
| Packaging | - | |
| Current - Continuous Drain(Id) | 7A | |
| Pd - Power Dissipation | 1.3W | |
| RDS(on) | 34mΩ@2.5V | |
| Gate Threshold Voltage (Vgs(th)) | 1.3V | |
| Drain to Source Voltage | 30V | |
| Type | N-Channel | |
| Gate Charge(Qg) | 10nC@4.5V | |
| Operating Temperature | - |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays | |
| Manufacturer | onsemi | |
| Packaging | - | |
| Current - Continuous Drain(Id) | 7A | |
| Pd - Power Dissipation | 1.3W | |
| RDS(on) | 34mΩ@2.5V |
| Type | Description | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 1.3V | |
| Drain to Source Voltage | 30V | |
| Type | N-Channel | |
| Gate Charge(Qg) | 10nC@4.5V | |
| Operating Temperature | - |
Report an ErrorShow similar products (0) >
Introduction
AI Translation
2SK2462 is an N-channel MOSFET designed for high-current switching applications.
Features
AI Translation
- Low on-resistance
- 2.5V drive
- Common drain type
- Built-in protection diode
- Built-in gate protection resistor
- Ideal for lithium battery charge/discharge switching
- Halogen-free compliant
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|---|---|---|
| 1+ | $ 0.3092 | $ 0.31 |
| 200+ | $ 0.1197 | $ 23.94 |
| 500+ | $ 0.1155 | $ 57.75 |
| 1,000+ | $ 0.1134 | $ 113.40 |
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Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays | |
| Manufacturer | onsemi | |
| Packaging | - | |
| Current - Continuous Drain(Id) | 7A | |
| Pd - Power Dissipation | 1.3W | |
| RDS(on) | 34mΩ@2.5V | |
| Gate Threshold Voltage (Vgs(th)) | 1.3V | |
| Drain to Source Voltage | 30V | |
| Type | N-Channel | |
| Gate Charge(Qg) | 10nC@4.5V | |
| Operating Temperature | - |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays | |
| Manufacturer | onsemi | |
| Packaging | - | |
| Current - Continuous Drain(Id) | 7A | |
| Pd - Power Dissipation | 1.3W | |
| RDS(on) | 34mΩ@2.5V |
| Type | Description | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 1.3V | |
| Drain to Source Voltage | 30V | |
| Type | N-Channel | |
| Gate Charge(Qg) | 10nC@4.5V | |
| Operating Temperature | - |
Report an ErrorShow similar products (0) >
Introduction
AI Translation
2SK2462 is an N-channel MOSFET designed for high-current switching applications.
Features
AI Translation
- Low on-resistance
- 2.5V drive
- Common drain type
- Built-in protection diode
- Built-in gate protection resistor
- Ideal for lithium battery charge/discharge switching
- Halogen-free compliant
C3282593 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |

