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onsemi NDH8502PRoHS

Manufacturer
MPN
NDH8502P
LCSC Part #
C3281950
Packaging
TSOP-8-3.30mm
Customer #
Key Attributes
Dual P-Channel, Current: -2.2A, Voltage: -30V
Datasheetpdf icononsemi NDH8502P
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QtyUnit Price(Reference Only)Total Amount
1+$ 0.6527$ 0.65
200+$ 0.2531$ 50.62
500+$ 0.2438$ 121.90
1,000+$ 0.2392$ 239.20
Standard Packaging3000/Full Reel
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays
Manufactureronsemi
PackagingTSOP-8-3.30mm
Current - Continuous Drain(Id)10A
Pd - Power Dissipation800mW
RDS(on)180mΩ@4.5V
Gate Threshold Voltage (Vgs(th))3V
Drain to Source Voltage30V
TypeP-Channel
Reverse Transfer Capacitance (Crss@Vds)100pF
Number2 P-Channel
Input Capacitance(Ciss)340pF
Gate Charge(Qg)14.5nC@10V
Operating Temperature-55℃~+150℃
Output Capacitance(Coss)218pF

Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging3000
Sales UnitPiece

Introduction

AI Translation

Produced using a proprietary high cell density DMOS process, the SuperSOT-8 P-channel enhancement-mode power MOSFETs feature an ultra-high density process specifically designed to minimize on-resistance. These devices are particularly suited for low-voltage applications such as notebook computer power management and other battery-powered circuits requiring fast high-side switching and low in-line power dissipation in an ultra-compact SMT package.

Features

AI Translation
  • RDS(ON) = 0.18 Ω at VGS = -4.5 V
  • -2.2 A, -30 V. RDS(ON) = 0.11 Ω at VGS = -10 V
  • Proprietary SuperSOT-8 package with copper lead frame for superior thermal and electrical performance
  • High-density cell design for ultra-low RDS(ON)
  • Excellent on-resistance and maximum DC current capability

Applications

AI Translation
  • Notebook PC power management
  • Other battery-powered circuits