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EDA ModelsEasyEDA
onsemi ISL9N304AS3ST
| Manufacturer | |
| MPN | ISL9N304AS3ST |
| LCSC Part # | C3281688 |
| Packaging | TO-263AB |
| Customer # | |
| Key Attributes | 30V 75A 3V 145W 7.5mΩ@4.5V 1 N-channel N-Channel TO-263AB Single FETs, MOSFETs RoHS |
| Datasheet |  onsemi ISL9N304AS3ST |
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | onsemi | |
| Packaging | TO-263AB | |
| Drain to Source Voltage | 30V | |
| Current - Continuous Drain(Id) | 75A | |
| Operating Temperature - | -55℃~+175℃ | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Pd - Power Dissipation | 145W | |
| RDS(on) | 7.5mΩ@4.5V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 4.075nF | |
| Gate Charge(Qg) | 105nC@10V | |
| Type | N-Channel |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 800 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
This device employs an advanced trench MOSFET technology, delivering low on-resistance while maintaining low gate charge characteristics. Optimized for switching applications, the device improves overall DC/DC converter efficiency and supports operation at higher switching frequencies.
Features
AI Translation
- Fast switching
- r<sub>DS(ON)</sub> = 0.0036 Ω (typ), V<sub>GS</sub> = 10 V
- r<sub>DS(ON)</sub> = 0.0060 Ω (typ), V<sub>GS</sub> = 4.5 V
- Q<sub>g</sub> (typ) = 38 nC, V<sub>GS</sub> = 5 V
- Q<sub>gd</sub> (typ) = 13 nC
- C<sub>ISS</sub> (typ) = 4075 pF
Applications
AI Translation
- DC/DC Converter
Not available now
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | onsemi | |
| Packaging | TO-263AB | |
| Drain to Source Voltage | 30V | |
| Current - Continuous Drain(Id) | 75A | |
| Operating Temperature - | -55℃~+175℃ | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Pd - Power Dissipation | 145W | |
| RDS(on) | 7.5mΩ@4.5V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 4.075nF | |
| Gate Charge(Qg) | 105nC@10V | |
| Type | N-Channel |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 800 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
This device employs an advanced trench MOSFET technology, delivering low on-resistance while maintaining low gate charge characteristics. Optimized for switching applications, the device improves overall DC/DC converter efficiency and supports operation at higher switching frequencies.
Features
AI Translation
- Fast switching
- r<sub>DS(ON)</sub> = 0.0036 Ω (typ), V<sub>GS</sub> = 10 V
- r<sub>DS(ON)</sub> = 0.0060 Ω (typ), V<sub>GS</sub> = 4.5 V
- Q<sub>g</sub> (typ) = 38 nC, V<sub>GS</sub> = 5 V
- Q<sub>gd</sub> (typ) = 13 nC
- C<sub>ISS</sub> (typ) = 4075 pF
Applications
AI Translation
- DC/DC Converter
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |