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NXP MRF101AN product image
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  • Pinout Diagram
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NXP MRF101ANRoHS

Manufacturer
MPN
MRF101AN
LCSC Part #
C3280618
Packaging
TO-220-3
Customer #
Key Attributes
133V 2.2V 115W 1 N-channel TO-220-3 RF FETs, MOSFETs RoHS
Datasheetpdf iconNXP MRF101AN

Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/RF FETs, MOSFETs
ManufacturerNXP
PackagingTO-220-3
Drain to Source Voltage133V
ConfigurationStandalone
TypeN-Channel
Gate Threshold Voltage (Vgs(th))2.2V
Operating Temperature-40℃~+175℃
Pd - Power Dissipation115W
Reverse Transfer Capacitance (Crss@Vds)0.96pF
Number1 N-channel
Input Capacitance(Ciss)149pF
Vgs-6V;10V
Output Capacitance(Coss)43.4pF

Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging50
Sales UnitPiece

Introduction

AI Translation

These devices are designed for high frequency (HF) and very high frequency (VHF) communications, industrial, scientific and medical (ISM), and broadcast applications. These devices are extremely rugged, exhibiting high performance at frequencies up to 250 MHz.

Features

AI Translation
  • Mirror pinout versions (A and B) for push-pull and dual-transistor configurations
  • Characterized over 30 to 50 V voltage range
  • Suitable for linear applications
  • Integrated ESD protection with extended negative gate-source voltage range for improved Class C operation
  • Included in NXP's long-term supply program, guaranteed availability for at least 15 years after product introduction

Applications

AI Translation
  • Industrial, Scientific, and Medical (ISM)
  • Laser generation
  • Plasma etching
  • Particle accelerators
  • Magnetic Resonance Imaging (MRI) and other medical applications
  • Industrial heating, welding, and drying systems
  • Radio and VHF television broadcasting
  • HF and VHF communications
  • Switching mode power supplies
In-Stock: 3
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QtyUnit PriceTotal Amount
1+$ 58.7416$ 58.74
30+$ 56.2435$ 1687.31
Standard Packaging50/Full Tube
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