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ST STP24N60M6
| Fabricante | |
| Cód. da peça | STP24N60M6 |
| Nº LCSC | C3280407 |
| Emb. | TO-220 |
| Número do Cliente | |
| Atrib. princ. | MOSFET N-CH 600V 17A TO-220 |
| Folha de Dados |  ST STP24N60M6 |
| Peças alternativas | 10 |
Especificações do Produto
| Tipo | Descrição | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Fabricante | ST | |
| Emb. | TO-220 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 600V | |
| Current - Continuous Drain(Id) | 17A | |
| Gate Threshold Voltage (Vgs(th)) | 4.75V | |
| Pd - Power Dissipation | 130W | |
| Reverse Transfer Capacitance (Crss@Vds) | 4.5pF | |
| RDS(on) | 190mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 960pF | |
| Gate Charge(Qg) | 23nC@10V | |
| Type | N-Channel |
| Tipo | Descrição | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Fabricante | ST | |
| Emb. | TO-220 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 600V | |
| Current - Continuous Drain(Id) | 17A | |
| Gate Threshold Voltage (Vgs(th)) | 4.75V |
| Tipo | Descrição | |
|---|---|---|
| Pd - Power Dissipation | 130W | |
| Reverse Transfer Capacitance (Crss@Vds) | 4.5pF | |
| RDS(on) | 190mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 960pF | |
| Gate Charge(Qg) | 23nC@10V | |
| Type | N-Channel |
Descrição
The new MDmesh™ M6 technology incorporates the latest improvements to the well-known and mature MDmesh super-junction (SJ) MOSFET family. STMicroelectronics has upgraded upon the previous generation of MDmesh devices with its new M6 technology. This technology not only significantly improves on-resistance R<sub>DS(ON)</sub> per unit area, but also delivers excellent switching performance while offering an enhanced user experience for maximum efficiency in end applications.
Recursos
- Reduced switching losses
- Lower on-resistance RDS(ON) per unit area compared to previous generation
- Low gate input resistance
- 100% avalanche tested
- Zener protection incorporated
Aplicações
- Switching applications
- LLC converters
- Boost PFC converters
| Qtd. | Preço unit. | Valor total |
|---|---|---|
| 1+ | $ 2.2412 | $ 2.24 |
| 10+ | $ 1.9157 | $ 19.16 |
| 30+ | $ 1.7122 | $ 51.37 |
| 100+ | $ 1.5023 | $ 150.23 |
| 500+ | $ 1.4079 | $ 703.95 |
| 1,000+ | $ 1.3672 | $ 1367.20 |
Encapsulamento Padrão50/Full Tube | ||
Especificações do Produto
| Tipo | Descrição | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Fabricante | ST | |
| Emb. | TO-220 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 600V | |
| Current - Continuous Drain(Id) | 17A | |
| Gate Threshold Voltage (Vgs(th)) | 4.75V | |
| Pd - Power Dissipation | 130W | |
| Reverse Transfer Capacitance (Crss@Vds) | 4.5pF | |
| RDS(on) | 190mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 960pF | |
| Gate Charge(Qg) | 23nC@10V | |
| Type | N-Channel |
| Tipo | Descrição | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Fabricante | ST | |
| Emb. | TO-220 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 600V | |
| Current - Continuous Drain(Id) | 17A | |
| Gate Threshold Voltage (Vgs(th)) | 4.75V |
| Tipo | Descrição | |
|---|---|---|
| Pd - Power Dissipation | 130W | |
| Reverse Transfer Capacitance (Crss@Vds) | 4.5pF | |
| RDS(on) | 190mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 960pF | |
| Gate Charge(Qg) | 23nC@10V | |
| Type | N-Channel |
Descrição
The new MDmesh™ M6 technology incorporates the latest improvements to the well-known and mature MDmesh super-junction (SJ) MOSFET family. STMicroelectronics has upgraded upon the previous generation of MDmesh devices with its new M6 technology. This technology not only significantly improves on-resistance R<sub>DS(ON)</sub> per unit area, but also delivers excellent switching performance while offering an enhanced user experience for maximum efficiency in end applications.
Recursos
- Reduced switching losses
- Lower on-resistance RDS(ON) per unit area compared to previous generation
- Low gate input resistance
- 100% avalanche tested
- Zener protection incorporated
Aplicações
- Switching applications
- LLC converters
- Boost PFC converters
C3280407 Biblioteca EasyEDA
Conformidade & Códigos de Exportação
| Tipo | Detalhes |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Tipo | Detalhes |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Tipo | Detalhes |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Peças alternativas
| MPN | Fabricante | Embalagem | Disponibilidade | Preço unitário | ||
|---|---|---|---|---|---|---|
| STP26N60DM6 | ST | TO-220-3 | 6 | $ 8.4871 | ||
| STP20N65M5 | ST | TO-220 | 976 | $ 2.2454 | ||
| STP25N60M2-EP | ST | TO-220 | 23 | $ 5.6939 | ||
| STP33N60M6-VB | VBsemi Elec | TO-220AB | 50 | $3.6141 $4.2518 | ||
| IPP60R120P7-VB | VBsemi Elec | TO-220AB | 5 | $2.5858 $3.0421 | ||
| SiHP120N60E-VB | VBsemi Elec | TO-220AB | 5 | $2.5898 $3.0468 | ||
| AOT125A60L-VB | VBsemi Elec | TO-220AB | 5 | $2.5898 $3.0468 | ||
| FCP125N60E-VB | VBsemi Elec | TO-220AB | 4 | $2.5898 $3.0468 | ||
| VBM16R20SFD | VBsemi Elec | TO-220AB | 0 | $ 3.5067 | ||
| TK25E60X-VB | VBsemi Elec | TO-220AB | 0 | $ 3.0468 |