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ST STP9N60M2RoHS

Manufacturer
MPN
STP9N60M2
LCSC Part #
C3280392
Packaging
TO-220
Customer #
Key Attributes
MOSFET N-CH 600V 5.5A TO-220
Datasheetpdf iconST STP9N60M2
In-Stock: 271
271 In stock, ships now
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QtyUnit PriceTotal Amount
1+$ 0.9766$ 0.98
10+$ 0.9554$ 9.55
30+$ 0.9424$ 28.27
100+$ 0.9277$ 92.77
Standard Packaging50/Full Tube
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerST
PackagingTO-220
Drain to Source Voltage600V
Output Capacitance(Coss)18pF
Current - Continuous Drain(Id)5.5A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation60W
Reverse Transfer Capacitance (Crss@Vds)680fF
RDS(on)780mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)320pF
Gate Charge(Qg)10nC@10V
TypeN-Channel

Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging50
Sales UnitPiece

Introduction

AI Translation

These devices are N-channel Power MOSFETs developed using the MDmesh M2 technology. Thanks to their strip layout and improved vertical structure, these devices exhibit low on-resistance and optimized switching characteristics, rendering them suitable for the most demanding high-efficiency converters.

Features

AI Translation
  • Extremely low gate charge
  • Excellent output capacitance (Coss) profile
  • 100% avalanche tested
  • Zener-protected

Applications

AI Translation
  • Switching applications