Taiwan Semiconductor TSM2N7002AKDCU6 RFG
| Manufacturer | Taiwan SemiconductorAsian Brands |
| MPN | TSM2N7002AKDCU6 RFG |
| LCSC Part # | C3280246 |
| Packaging | SOT-363 |
| Customer # | |
| Key Attributes | Dual N-Channel, Current: 220mA, Voltage: 60V |
| Datasheet |  Taiwan Semiconductor TSM2N7002AKDCU6 RFG |
Products Specifications
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays | |
| Manufacturer | Taiwan Semiconductor | |
| Packaging | SOT-363 | |
| Current - Continuous Drain(Id) | 220mA | |
| Pd - Power Dissipation | 240mW | |
| RDS(on) | 3Ω@4.5V | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Drain to Source Voltage | 60V | |
| Type | N-Channel | |
| Reverse Transfer Capacitance (Crss@Vds) | 3pF | |
| Number | 2 N-Channel | |
| Input Capacitance(Ciss) | 20pF | |
| Gate Charge(Qg) | 670pC@4.5V | |
| Operating Temperature | -55℃~+150℃ |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays | |
| Manufacturer | Taiwan Semiconductor | |
| Packaging | SOT-363 | |
| Current - Continuous Drain(Id) | 220mA | |
| Pd - Power Dissipation | 240mW | |
| RDS(on) | 3Ω@4.5V | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Type | Description | |
|---|---|---|
| Drain to Source Voltage | 60V | |
| Type | N-Channel | |
| Reverse Transfer Capacitance (Crss@Vds) | 3pF | |
| Number | 2 N-Channel | |
| Input Capacitance(Ciss) | 20pF | |
| Gate Charge(Qg) | 670pC@4.5V | |
| Operating Temperature | -55℃~+150℃ |
Introduction
These N-channel logic-level enhancement-mode power MOSFETs are fabricated using a proprietary high cell density DMOS process. This ultra-high density process is designed to minimize on-resistance. These devices are particularly suited for low-voltage applications in notebook computers, portable phones, PCMCIA cards, and other battery-powered circuits requiring fast switching and low on-state power dissipation in a very compact SMT package.
Features
- Low on-resistance R<sub>DS(ON)</sub> for minimized conduction losses
- Logic level
- Low gate charge for fast power switching
- ESD protection up to 2.5KV (HBM)
- RoHS compliant
- Halogen-free per IEC 61249-2-21
Applications
- Low-side load switch
- Level shifting circuit
- General-purpose switching circuit
| Qty | Unit Price(Reference Only) | Total Amount |
|---|---|---|
| 1+ | $ 0.0764 | $ 0.08 |
| 200+ | $ 0.0296 | $ 5.92 |
| 500+ | $ 0.0286 | $ 14.30 |
| 1,000+ | $ 0.0281 | $ 28.10 |
Standard Packaging3000/Full Reel | ||
Products Specifications
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays | |
| Manufacturer | Taiwan Semiconductor | |
| Packaging | SOT-363 | |
| Current - Continuous Drain(Id) | 220mA | |
| Pd - Power Dissipation | 240mW | |
| RDS(on) | 3Ω@4.5V | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Drain to Source Voltage | 60V | |
| Type | N-Channel | |
| Reverse Transfer Capacitance (Crss@Vds) | 3pF | |
| Number | 2 N-Channel | |
| Input Capacitance(Ciss) | 20pF | |
| Gate Charge(Qg) | 670pC@4.5V | |
| Operating Temperature | -55℃~+150℃ |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays | |
| Manufacturer | Taiwan Semiconductor | |
| Packaging | SOT-363 | |
| Current - Continuous Drain(Id) | 220mA | |
| Pd - Power Dissipation | 240mW | |
| RDS(on) | 3Ω@4.5V | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Type | Description | |
|---|---|---|
| Drain to Source Voltage | 60V | |
| Type | N-Channel | |
| Reverse Transfer Capacitance (Crss@Vds) | 3pF | |
| Number | 2 N-Channel | |
| Input Capacitance(Ciss) | 20pF | |
| Gate Charge(Qg) | 670pC@4.5V | |
| Operating Temperature | -55℃~+150℃ |
Introduction
These N-channel logic-level enhancement-mode power MOSFETs are fabricated using a proprietary high cell density DMOS process. This ultra-high density process is designed to minimize on-resistance. These devices are particularly suited for low-voltage applications in notebook computers, portable phones, PCMCIA cards, and other battery-powered circuits requiring fast switching and low on-state power dissipation in a very compact SMT package.
Features
- Low on-resistance R<sub>DS(ON)</sub> for minimized conduction losses
- Logic level
- Low gate charge for fast power switching
- ESD protection up to 2.5KV (HBM)
- RoHS compliant
- Halogen-free per IEC 61249-2-21
Applications
- Low-side load switch
- Level shifting circuit
- General-purpose switching circuit
C3280246 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |