MCC BSS8402DW-TP
| Manufacturer | |
| MPN | BSS8402DW-TP |
| LCSC Part # | C3280242 |
| Packaging | SOT-363 |
| Customer # | |
| Key Attributes | Dual N/P-Channel MOSFET, Current:0.13A, Voltage:60V |
| Datasheet |
Products Specifications
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays | |
| Manufacturer | MCC | |
| Packaging | SOT-363 | |
| Current - Continuous Drain(Id) | 130mA | |
| Pd - Power Dissipation | 200mW | |
| RDS(on) | 3.75Ω@10V | |
| Gate Threshold Voltage (Vgs(th)) | 2V | |
| Drain to Source Voltage | 60V | |
| Type | N-Channel + P-Channel | |
| Reverse Transfer Capacitance (Crss@Vds) | 5pF | |
| Number | 1 N-Channel + 1 P-Channel | |
| Input Capacitance(Ciss) | 50pF | |
| Gate Charge(Qg) | - | |
| Operating Temperature | -55℃~+150℃ | |
| Output Capacitance(Coss) | 25pF |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays | |
| Manufacturer | MCC | |
| Packaging | SOT-363 | |
| Current - Continuous Drain(Id) | 130mA | |
| Pd - Power Dissipation | 200mW | |
| RDS(on) | 3.75Ω@10V | |
| Gate Threshold Voltage (Vgs(th)) | 2V | |
| Drain to Source Voltage | 60V |
| Type | Description | |
|---|---|---|
| Type | N-Channel + P-Channel | |
| Reverse Transfer Capacitance (Crss@Vds) | 5pF | |
| Number | 1 N-Channel + 1 P-Channel | |
| Input Capacitance(Ciss) | 50pF | |
| Gate Charge(Qg) | - | |
| Operating Temperature | -55℃~+150℃ | |
| Output Capacitance(Coss) | 25pF |
Introduction
The FDFC2P100 integrates the superior performance of PowerTrench MOSFET technology and an ultra-low forward voltage drop Schottky barrier rectifier in an SSOT-6 package. This device provides a single-package solution for DC-DC converters. It features a fast-switching, low gate charge MOSFET with extremely low on-resistance. By replacing the separately connected Schottky diode with an internal connection between the Schottky diode cathode pn and the P-channel PowerTrench MOSFET drain pin, thermal characteristics and power dissipation are significantly improved.
Features
- High-density cell design for ultra-low on-resistance RDS(on)
- Robust and reliable
- Epoxy meets UL 94 V-0 flammability rating
- Moisture Sensitivity Level 1
- Halogen-free, "green" device
- Lead-free finish/RoHS compliant (suffix "P" denotes RoHS compliance, see ordering information)
| Qty | Unit Price(Reference Only) | Total Amount |
|---|---|---|
| 1+ | $ 0.0878 | $ 0.09 |
| 10+ | $ 0.0698 | $ 0.70 |
| 30+ | $ 0.0608 | $ 1.82 |
| 100+ | $ 0.054 | $ 5.40 |
| 500+ | $ 0.0487 | $ 24.35 |
| 1,000+ | $ 0.046 | $ 46.00 |
Standard Packaging3000/Full Reel | ||
Products Specifications
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays | |
| Manufacturer | MCC | |
| Packaging | SOT-363 | |
| Current - Continuous Drain(Id) | 130mA | |
| Pd - Power Dissipation | 200mW | |
| RDS(on) | 3.75Ω@10V | |
| Gate Threshold Voltage (Vgs(th)) | 2V | |
| Drain to Source Voltage | 60V | |
| Type | N-Channel + P-Channel | |
| Reverse Transfer Capacitance (Crss@Vds) | 5pF | |
| Number | 1 N-Channel + 1 P-Channel | |
| Input Capacitance(Ciss) | 50pF | |
| Gate Charge(Qg) | - | |
| Operating Temperature | -55℃~+150℃ | |
| Output Capacitance(Coss) | 25pF |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays | |
| Manufacturer | MCC | |
| Packaging | SOT-363 | |
| Current - Continuous Drain(Id) | 130mA | |
| Pd - Power Dissipation | 200mW | |
| RDS(on) | 3.75Ω@10V | |
| Gate Threshold Voltage (Vgs(th)) | 2V | |
| Drain to Source Voltage | 60V |
| Type | Description | |
|---|---|---|
| Type | N-Channel + P-Channel | |
| Reverse Transfer Capacitance (Crss@Vds) | 5pF | |
| Number | 1 N-Channel + 1 P-Channel | |
| Input Capacitance(Ciss) | 50pF | |
| Gate Charge(Qg) | - | |
| Operating Temperature | -55℃~+150℃ | |
| Output Capacitance(Coss) | 25pF |
Introduction
The FDFC2P100 integrates the superior performance of PowerTrench MOSFET technology and an ultra-low forward voltage drop Schottky barrier rectifier in an SSOT-6 package. This device provides a single-package solution for DC-DC converters. It features a fast-switching, low gate charge MOSFET with extremely low on-resistance. By replacing the separately connected Schottky diode with an internal connection between the Schottky diode cathode pn and the P-channel PowerTrench MOSFET drain pin, thermal characteristics and power dissipation are significantly improved.
Features
- High-density cell design for ultra-low on-resistance RDS(on)
- Robust and reliable
- Epoxy meets UL 94 V-0 flammability rating
- Moisture Sensitivity Level 1
- Halogen-free, "green" device
- Lead-free finish/RoHS compliant (suffix "P" denotes RoHS compliance, see ordering information)
C3280242 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |

