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MCC BSS8402DW-TP product image
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MCC BSS8402DW-TPRoHS

Manufacturer
MPN
BSS8402DW-TP
LCSC Part #
C3280242
Packaging
SOT-363
Customer #
Key Attributes
Dual N/P-Channel MOSFET, Current:0.13A, Voltage:60V
Datasheetpdf iconMCC BSS8402DW-TP
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QtyUnit Price(Reference Only)Total Amount
1+$ 0.0878$ 0.09
10+$ 0.0698$ 0.70
30+$ 0.0608$ 1.82
100+$ 0.054$ 5.40
500+$ 0.0487$ 24.35
1,000+$ 0.046$ 46.00
Standard Packaging3000/Full Reel
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Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays
ManufacturerMCC
PackagingSOT-363
Current - Continuous Drain(Id)130mA
Pd - Power Dissipation200mW
RDS(on)3.75Ω@10V
Gate Threshold Voltage (Vgs(th))2V
Drain to Source Voltage60V
TypeN-Channel + P-Channel
Reverse Transfer Capacitance (Crss@Vds)5pF
Number1 N-Channel + 1 P-Channel
Input Capacitance(Ciss)50pF
Gate Charge(Qg)-
Operating Temperature-55℃~+150℃
Output Capacitance(Coss)25pF

Introduction

AI Translation

The FDFC2P100 integrates the superior performance of PowerTrench MOSFET technology and an ultra-low forward voltage drop Schottky barrier rectifier in an SSOT-6 package. This device provides a single-package solution for DC-DC converters. It features a fast-switching, low gate charge MOSFET with extremely low on-resistance. By replacing the separately connected Schottky diode with an internal connection between the Schottky diode cathode pn and the P-channel PowerTrench MOSFET drain pin, thermal characteristics and power dissipation are significantly improved.

Features

AI Translation
  • High-density cell design for ultra-low on-resistance RDS(on)
  • Robust and reliable
  • Epoxy meets UL 94 V-0 flammability rating
  • Moisture Sensitivity Level 1
  • Halogen-free, "green" device
  • Lead-free finish/RoHS compliant (suffix "P" denotes RoHS compliance, see ordering information)