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onsemi FDC658APRoHS

Manufacturer
onsemi
MPN
FDC658AP
LCSC Part #
C3280198
Packaging
SuperSOT-6
Customer #
Key Attributes
MOSFET P-CH 30V 4A SuperSOT-6
Datasheetpdf icononsemi FDC658AP
In-Stock: 1,980
1,980 In stock, ships now
Minimum: 5Multiple: 5Sales Unit: Piece
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QtyUnit PriceTotal Amount
5+$ 0.3947$ 1.97
50+$ 0.3212$ 16.06
150+$ 0.2897$ 43.46
500+$ 0.2197$ 109.85
3,000+$ 0.2023$ 606.90
6,000+$ 0.1917$ 1150.20
Standard Packaging3000/Full Reel
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Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
Manufactureronsemi
PackagingSuperSOT-6
Drain to Source Voltage30V
Output Capacitance(Coss)180pF
Current - Continuous Drain(Id)4A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation1.6W
Reverse Transfer Capacitance (Crss@Vds)90pF
RDS(on)75mΩ@4.5V
Number1 P-Channel
Input Capacitance(Ciss)680pF
Gate Charge(Qg)-
TypeP-Channel
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Introduction

AI Translation

This P-channel logic-level MOSFET is manufactured using onsemi's advanced POWERTRENCH process, optimized for battery power management applications.

Features

AI Translation
  • Maximum RDS(on) = 50 mΩ at VGS = -10 V, ID = -4 A
  • Maximum RDS(on) = 75 mΩ at VGS = -4.5 V, ID = -3.4 A
  • Low gate charge
  • Ultra-low RDS(on) achieved with high-performance trench technology
  • Lead-free, halogen-free, RoHS compliant

Applications

AI Translation
  • Battery Management - Load Switch - Battery Protection - DC-DC Conversion