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onsemi FDN302PRoHS

Manufacturer
onsemi
MPN
FDN302P
LCSC Part #
C3280162
Packaging
SOT-23-3
Customer #
Key Attributes
MOSFET P-CH 20V 2.4A SOT-23-3
Datasheetpdf icononsemi FDN302P
In-Stock: 955
955 In stock, ships now
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QtyUnit PriceTotal Amount
5+$ 0.2835$ 1.42
50+$ 0.2271$ 11.36
150+$ 0.2029$ 30.44
500+$ 0.1727$ 86.35
3,000+$ 0.1593$ 477.90
6,000+$ 0.1512$ 907.20
Standard Packaging3000/Full Reel
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
Manufactureronsemi
PackagingSOT-23-3
Drain to Source Voltage20V
Output Capacitance(Coss)211pF
Current - Continuous Drain(Id)2.4A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.5V
Pd - Power Dissipation500mW
Reverse Transfer Capacitance (Crss@Vds)112pF
RDS(on)80mΩ@2.5V
Number1 P-Channel
Input Capacitance(Ciss)882pF
Gate Charge(Qg)14nC@4.5V
TypeP-Channel
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Additional Information

TypeDetails
Minimum5
Multiple5
Standard Packaging3000
Sales UnitPiece

Introduction

AI Translation

This P-Channel 2.5V specified MOSFET uses a rugged gate version of ON’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V – 12V).

Features

AI Translation
  • –20 V, –2.4 A. RDS(ON)=0.055 Ω @ VGS=-4.5 V
  • RDS(ON)=0.080 Ω @ VGS=-2.5 V
  • Fast switching speed
  • High performance trench technology for extremely low RDS(ON)
  • SuperSOT -3 provides low RDS(ON) and 30% higher power handling capability than SOT23 in the same footprint

Applications

AI Translation
  • Power management
  • Load switch
  • Battery protection